公开(公告)号：US12254906B1

公开(公告)日：2025-03-18

申请号：US17808680

申请日：2022-06-24

Applicant: Seagate Technology LLC

Inventor： Cheng Bi ,  Zhiguo Ge ,  Shaun E McKinlay ,  Minzhen Cai

IPC: G11B5/31 ,  B24B37/04

Abstract: A method of planarizing a device having a surface topography with at least one material at a surface of the device is described. The method comprises the steps of depositing a stop layer over at least a portion of the at least one material which substantially retains the surface topography of the device. A sacrificial layer is deposited over at least a portion of the stop layer. A planarization process is performed on the device. The planarization process includes the steps of performing a chemical mechanical polish (CMP) on the top surface of the sacrificial layer. A physical removal step is conducted on the remainder portion of the sacrificial layer to form a planarized surface. A second CMP step and a second physical removal step are conducted, to form a planarized device.