公开(公告)号：US20200232093A1

公开(公告)日：2020-07-23

申请号：US16250488

申请日：2019-01-17

Applicant: Seagate Technology LLC

Inventor： Xiaoyue Huang ,  Deming Zhang ,  Minna Hovinen ,  Ziyou Zhou

IPC: C23C16/32 ,  C23C16/453 ,  C01B32/963 ,  G02B6/02

Abstract: In a method for depositing a layer of amorphous hydrogenated silicon carbide (SiC:H), a gas mixture comprising a reactive gas to inert gas volume ratio of 1:12 to 2:3 is introduced into a reaction chamber of a plasma-enhanced chemical vapor deposition apparatus. The reactive gas has a ratio of Si of 50 to 60, C of 3 to 13, and H of 32 to 42 at %. The inert gas comprises i) a first inert gas selected from helium, neon and mixtures; and ii) a second inert gas selected from argon, krypton, xenon and mixtures. The reaction plasma is at a power frequency of 1-16 MHz at a power level of 100 W to 700 W. The resulting layer exhibits a refractive index of not less than 2.4 and a loss of not more than 180 dB/cm at an indicated wavelength within 800 to 900 nm.

公开(公告)号：US11142820B2

公开(公告)日：2021-10-12

申请号：US16250488

申请日：2019-01-17

Applicant: Seagate Technology LLC

Inventor： Xiaoyue Huang ,  Deming Zhang ,  Minna Hovinen ,  Ziyou Zhou

IPC: C23C16/32 ,  G02B6/02 ,  C01B32/963 ,  C23C16/453

Abstract: In a method for depositing a layer of amorphous hydrogenated silicon carbide (SiC:H), a gas mixture comprising a reactive gas to inert gas volume ratio of 1:12 to 2:3 is introduced into a reaction chamber of a plasma-enhanced chemical vapor deposition apparatus. The reactive gas has a ratio of Si of 50 to 60, C of 3 to 13, and H of 32 to 42 at %. The inert gas comprises i) a first inert gas selected from helium, neon and mixtures; and ii) a second inert gas selected from argon, krypton, xenon and mixtures. The reaction plasma is at a power frequency of 1-16 MHz at a power level of 100 W to 700 W. The resulting layer exhibits a refractive index of not less than 2.4 and a loss of not more than 180 dB/cm at an indicated wavelength within 800 to 900 nm.