公开(公告)号：US20180374931A1

公开(公告)日：2018-12-27

申请号：US16103518

申请日：2018-08-14

Applicant: Semiconductor Components Industries, LLC

Inventor： Umesh SHARMA ,  Harry Yue GEE ,  Der Min LIOU ,  David D. MARREIRO ,  Sudhama C. SHASTRI

IPC: H01L29/66 ,  H01L29/861 ,  H01L23/00 ,  H01L29/866 ,  H01L27/02

Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least two diodes and a Zener diode. In accordance with embodiments, a semiconductor material is provided that includes an epitaxial layer. The at least two diodes and the Zener diode are created at the surface of the epitaxial layer, where the at least two diodes may be adjacent to the Zener diode.