公开(公告)号：US20140225178A1

公开(公告)日：2014-08-14

申请号：US14258260

申请日：2014-04-22

Applicant: Semiconductor Components Industries, LLC

Inventor： Moshe AGAM ,  Thierry Coffi Herve YAO ,  Skip Shizhen LIU

IPC: H01L23/525 ,  H01L29/78

CPC classification number: H01L23/5252 ,  H01L27/101 ,  H01L27/11206 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include a substrate, an access transistor, a read transistor, and an antifuse component. Each of the access and read transistors can include source/drain regions at least partly within the substrate, a gate dielectric layer overlying the substrate, and a gate electrode overlying the gate dielectric layer. An antifuse component can include a first electrode lying at least partly within the substrate, an antifuse dielectric layer overlying the substrate, and a second electrode overlying the antifuse dielectric layer. The second electrode of the antifuse component can be coupled to one of the source/drain regions of the access transistor and to the gate electrode of the read transistor. In an embodiment, the antifuse component can be in the form of a transistor structure. The electronic device can be formed using a single polysilicon process.

Abstract translation: 电子设备可以包括非易失性存储单元，其中非易失性存储单元可以包括基板，存取晶体管，读晶体管和反熔丝元件。 每个访问和读取晶体管可以包括至少部分在衬底内的源极/漏极区域，覆盖衬底的栅极电介质层和覆盖栅极电介质层的栅电极。 反熔丝部件可以包括至少部分位于衬底内的第一电极，覆盖衬底的反熔丝电介质层和覆盖反熔丝电介质层的第二电极。 反熔丝组件的第二电极可以耦合到存取晶体管的源极/漏极区域和读取晶体管的栅极电极之一。 在一个实施例中，反熔丝部件可以是晶体管结构的形式。 电子器件可以使用单个多晶硅工艺形成。