公开(公告)号：US20150076503A1

公开(公告)日：2015-03-19

申请号：US14553223

申请日：2014-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masayuki SAKAKURA ,  Shuhei TAKAHASHI ,  Kazuko IKEDA ,  Tomoya FUTAMURA

IPC: H01L51/52 ,  H01L27/32

CPC classification number: H01L51/5253 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H05B33/04

Abstract: A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode. The light emitting device further includes a layer formed of a different material from that of the insulating layer only between the electrode and the first electrode over the insulating layer and the insulating layer.

Abstract translation: 本发明的发光器件包括薄膜晶体管，覆盖薄膜晶体管的绝缘层，通过形成在绝缘层上的接触孔与薄膜晶体管电连接的电极，以及由绝缘层形成的发光元件 在与电极电连接的第一电极和第二电极之间插入发光层。 发光器件还包括仅在绝缘层和绝缘层上的电极和第一电极之间的与绝缘层不同的材料形成的层。