公开(公告)号：US20210327915A1

公开(公告)日：2021-10-21

申请号：US17365149

申请日：2021-07-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kiyoshi KATO ,  Masayukl SAKAKURA

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/108

Abstract: A semiconductor device that is suitable for miniaturization and higher density is provided. A semiconductor device includes a first transistor over a semiconductor substrate, a second transistor including an oxide semiconductor over the first transistor, and a capacitor over the second transistor. The capacitor includes a first conductor, a second conductor, and an insulator. The second conductor covers a side surface of the first conductor with an insulator provided therebetween.