公开(公告)号：US10528198B2

公开(公告)日：2020-01-07

申请号：US15697738

申请日：2017-09-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiharu Hirakata ,  Koichi Takeshima ,  Takayuki Ohide ,  Kenji Shinozaki ,  Kanpei Kojima

IPC: G06F3/044 ,  G09G3/36 ,  G09G3/3233 ,  G06F1/16

Abstract: A display panel and the like with a novel structure are provided. In the display panel, a first functional layer includes a pixel circuit and a first insulating film. A second functional layer includes a coloring film and a second insulating film. The first insulating film and the second insulating film each have a thickness of 0.5 μm to 3 μm and a Young's modulus of 3 GPa to 12 GPa. A sealing material is provided between a first base and a second base. A structure body is provided between the first base and the second base, and keeps a predetermined gap between the first and second bases. A pixel is surrounded by the first base, the second base, and the sealing material. A display element in the pixel is electrically connected to a pixel circuit and overlaps with a coloring film and a liquid crystal material.

公开(公告)号：US11349006B2

公开(公告)日：2022-05-31

申请号：US16966066

申请日：2019-02-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka Nakazawa ,  Kenichi Okazaki ,  Takayuki Ohide ,  Rai Sato

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/45 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1368 ,  H01L27/32

Abstract: A semiconductor device is fabricated by a method including the following steps: a first step of forming a semiconductor film containing a metal oxide over an insulating layer; a second step of forming a conductive film over the semiconductor film; a third step of forming a first resist mask over the conductive film and etching the conductive film to form a first conductive layer and to expose a top surface of the semiconductor film that is not covered with the first conductive layer; and a fourth step of forming a second resist mask that covers a top surface and a side surface of the first conductive layer and part of the top surface of the semiconductor film and etching the semiconductor film to form a semiconductor layer and to expose a top surface of the insulating layer that is not covered with the semiconductor layer.

公开(公告)号：US11282965B2

公开(公告)日：2022-03-22

申请号：US16959259

申请日：2019-01-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka Nakazawa ,  Takashi Hamochi ,  Takayuki Ohide ,  Kenichi Okazaki

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/443 ,  H01L21/4763 ,  H01L29/45 ,  H01L29/66 ,  G02F1/1368 ,  H01L27/32

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable display device is provided. The semiconductor device is fabricated by a method that includes a first step of forming a semiconductor layer containing a metal oxide, a second step of forming a conductive film over the semiconductor layer, a third step of etching the conductive film such that the conductive film is divided over the semiconductor layer and a portion of the semiconductor layer is uncovered, and a fourth step of performing first treatment on the conductive film and the portion of the semiconductor layer. The conductive film contains copper, silver, gold, or aluminum. The first treatment is plasma treatment in an atmosphere containing a mixed gas of a first gas containing an oxygen element and a second gas containing a hydrogen element.

公开(公告)号：US12142658B2

公开(公告)日：2024-11-12

申请号：US17747063

申请日：2022-05-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka Nakazawa ,  Kenichi Okazaki ,  Takayuki Ohide ,  Rai Sato

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  G02F1/1368 ,  H10K59/121

Abstract: A semiconductor device is fabricated by a method including the following steps: a first step of forming a semiconductor film containing a metal oxide over an insulating layer; a second step of forming a conductive film over the semiconductor film; a third step of forming a first resist mask over the conductive film and etching the conductive film to form a first conductive layer and to expose a top surface of the semiconductor film that is not covered with the first conductive layer; and a fourth step of forming a second resist mask that covers a top surface and a side surface of the first conductive layer and part of the top surface of the semiconductor film and etching the semiconductor film to form a semiconductor layer and to expose a top surface of the insulating layer that is not covered with the semiconductor layer.

公开(公告)号：US10170662B2

公开(公告)日：2019-01-01

申请号：US14800892

申请日：2015-07-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tomoya Aoyama ,  Ryu Komatsu ,  Takayuki Ohide

IPC: H01L33/00 ,  H01L51/00 ,  H01L21/768 ,  H01L25/075 ,  G02F1/13357 ,  G02B6/00 ,  H05K1/18 ,  H05K3/32 ,  G02F1/1335 ,  F21S6/00 ,  F21Y105/10 ,  F21Y115/10

Abstract: A method for manufacturing a circuit board includes a first process, a second process, a third process, and a fourth process. The first process includes a step of providing a circuit and an electrode over a first surface of a first substrate. The second process includes a step of providing a reflective layer on the first surface side of the first substrate or a second surface side of a second substrate. The third process includes a step of attaching the first surface and the second surface to each other with a bonding layer therebetween to face each other so that the reflective layer overlaps with the electrode and the reflective layer surrounds part of the electrode. The fourth process includes a step of irradiating at least part of the reflective layer with laser light from a side opposite to the electrode.