公开(公告)号：US20020080497A1

公开(公告)日：2002-06-27

申请号：US10026340

申请日：2001-12-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Koichiro Tanaka ,  Setsuo Nakajima ,  Takehito Yagi ,  Mikito Ishii ,  Kenichiro Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： G02B027/14 ,  G02B027/12

CPC分类号： G02B27/108 ,  G02B27/145

摘要： A laser irradiation apparatus having a low running cost compared to the conventional, and a laser irradiation method using the laser irradiation apparatus, are provided. Crystal grains having a size in the same order as, or greater than, conventional grains are formed. The cooling speed of a semiconductor film is made slower, and it becomes possible to form crystal grains having a grain size in the same order as, or greater than, the size of grains formed in the case of irradiating laser light having a long output time to the semiconductor film. This is achieved by delaying one laser light with respect to another laser light, combining the laser lights, and performing irradiation to the semiconductor film in the case of irradiating laser light using a solid state laser as a light source, which has a short output time.

摘要翻译： 提供了一种与以往相比具有低运行成本的激光照射装置和使用该激光照射装置的激光照射方法。 形成具有与常规晶粒相同或更大的尺寸的晶粒。 半导体膜的冷却速度变慢，可以形成具有与照射具有长输出时间的激光的情况下形成的晶粒尺寸相同或更大的晶粒尺寸的晶粒 到半导体膜。 这是通过相对于另一激光器延迟一个激光，组合激光，并且在使用固态激光器作为光源照射激光的情况下对半导体膜进行照射，其具有短的输出时间 。