公开(公告)号：US08932903B2

公开(公告)日：2015-01-13

申请号：US13875563

申请日：2013-05-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Sato ,  Takayuki Cho ,  Shunsuke Koshioka ,  Tetsuya Ohshima ,  Naoya Sakamoto

IPC: H01L21/00 ,  H01L29/66 ,  H05K3/06 ,  H01L27/12

CPC classification number: H01L29/42384 ,  H01L21/44 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/66969 ,  H05K3/06

Abstract: A wiring which is formed using a conductive film containing copper and whose shape is controlled is provided. A transistor including an electrode which is formed in the same layer as the wiring is provided. Further, a semiconductor device including the transistor and the wiring is provided. A resist mask is formed over a second conductive film stacked over a first conductive film; part of the second conductive film and part of the first conductive film are removed with use of the resist mask as a mask so that the first conductive film has a taper angle greater than or equal to 15° and less than or equal to 45°; and the resist mask is removed. The first conductive film contains copper.

Abstract translation: 提供了使用含有铜的导电膜形成并且其形状被控制的布线。 提供了包括与布线形成在同一层中的电极的晶体管。 此外，提供了包括晶体管和布线的半导体器件。 在层叠在第一导电膜上的第二导电膜上形成抗蚀剂掩模; 使用抗蚀剂掩模作为掩模去除第二导电膜的一部分和第一导电膜的一部分，使得第一导电膜具有大于或等于15°且小于或等于45°的锥角; 并且去除抗蚀剂掩模。 第一导电膜含有铜。