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公开(公告)号:US20220365275A1
公开(公告)日:2022-11-17
申请号:US17742974
申请日:2022-05-12
申请人: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
发明人: Xiaojun CHEN , Honglin ZENG , Xia FENG , Dongsheng ZHANG , Xiage YIN , Jiaheng WU
摘要: A method of forming a semiconductor structure includes: providing an initial substrate having a first region and a second region; forming a first substrate on the initial substrate; forming a first insulating layer on the first substrate; forming a second substrate on the first insulating layer; removing the second substrate in the second region to form a second insulating layer on the first insulating layer in the second region; and forming a plurality of passive devices on the second insulating layer in the second region and forming a plurality of active devices on the second substrate in the first region.
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公开(公告)号:US20230324619A1
公开(公告)日:2023-10-12
申请号:US18128501
申请日:2023-03-30
发明人: Xiage YIN , Xia FENG , Xiaojun CHEN , Dongsheng ZHANG , Jiaheng WU
IPC分类号: G02B6/30
CPC分类号: G02B6/305
摘要: An optical device and its fabrication method are provided. The method includes: providing a substrate including a coupling region; forming a first dielectric layer on the substrate; forming an initial waveguide groove in the first dielectric layer on the coupling region; forming a patterned layer on a surface of the first dielectric layer and in the initial waveguide groove, exposing at least a portion of a bottom of the initial waveguide groove; and using the patterned layer as a mask to etch the first dielectric layer, to form a waveguide structure on the substrate. The waveguide structure includes a waveguide end structure on the coupling region.
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