公开(公告)号：US11908865B2

公开(公告)日：2024-02-20

申请号：US17576876

申请日：2022-01-14

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Da Huang ,  Yao Qi Dong ,  Xiaowan Dai ,  Zhen Tian

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L27/0924 ,  H01L21/823842 ,  H01L21/823878

摘要： A semiconductor structure and a fabrication method of the semiconductor structure are provided. The semiconductor structure includes a substrate. The substrate includes a first region, a second region, and an isolation region between the first region and the second region. The semiconductor structure also includes a first fin, a second fin and a third fin disposed over the first region, the second region, and the isolation region, respectively. Further, the semiconductor structure includes a gate structure. The gate structure includes a first work function layer over the first region and a first portion of the isolation region, and a second work function layer over the second region and a second portion of the isolation region. An interface where the first work function layer is in contact with the second work function layer is located over a top surface of the third fin.