公开(公告)号：US20060037942A1

公开(公告)日：2006-02-23

申请号：US11170061

申请日：2005-06-30

申请人： Seong-Kyu Yun ,  Kenichi Orui ,  Chang-Ki Hong ,  Jae-Dong Lee ,  Sung-Jun Kim ,  Haruki Nojo

发明人： Seong-Kyu Yun ,  Kenichi Orui ,  Chang-Ki Hong ,  Jae-Dong Lee ,  Sung-Jun Kim ,  Haruki Nojo

IPC分类号： C09K13/00 ,  C03C15/00 ,  H01L21/302

CPC分类号： C03C19/00 ,  C03C2218/328 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212

摘要： A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming a surface of a capacitor using the slurry. The slurry may include an abrasive, an oxidizer, and at least one pH controller to control a pH of the slurry.

摘要翻译： 使用浆料的浆料，化学机械抛光（CMP）方法以及使用该浆料形成电容器表面的方法。 浆料可以包括研磨剂，氧化剂和至少一种pH控制剂以控制浆料的pH。

公开(公告)号：US07968465B2

公开(公告)日：2011-06-28

申请号：US10568077

申请日：2004-08-12

申请人： Robert J. Small ,  Haruki Nojo ,  Kenichi Orui ,  Steve Masami Aragaki ,  Atsushi Hayashida

发明人： Robert J. Small ,  Haruki Nojo ,  Kenichi Orui ,  Steve Masami Aragaki ,  Atsushi Hayashida

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463

摘要： A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0.0005 to about 1 moles/kilogram of periodic acid, from about 0.2% to about 6% % by weight of silica abrasive having an average particle size of about 50 nm or less, and an amine in an amount sufficient to adjust the pH of the composition to between about 2.5 and 7. The removal selectivity of the ruthenium to a. low-K dielectric is greater than 20:1. Advantageously, the substrate further has a tantalum-containing compound, and the polishing rate of the tantalum-containing compound is about the same as the polishing rate of the ruthenium, so that the polishing process is a one-step process.

摘要翻译： 一种抛光其上具有至少一个钌特征的半导体衬底表面和至少一种电介质材料的方法，其中所述衬底与含有约0.0005至约1摩尔/千克高碘酸的水性组合物接触，约0.2％至 约6重量％的平均粒度为约50nm或更小的二氧化硅磨料，以及足以将组合物的pH调节至约2.5至7的量的胺。钌对于 。 低K电介质大于20：1。 有利的是，基板还含有含钽化合物，并且含钽化合物的抛光速率与钌的抛光速率大致相同，因此抛光过程是一步法。

公开(公告)号：US20080038995A1

公开(公告)日：2008-02-14

申请号：US10568077

申请日：2004-08-12

申请人： Robert J. Small ,  Haruki Nojo ,  Kenichi Orui ,  Steve Masami Aragaki ,  Atsushi Hayashida

发明人： Robert J. Small ,  Haruki Nojo ,  Kenichi Orui ,  Steve Masami Aragaki ,  Atsushi Hayashida

IPC分类号： B24B1/00

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463

摘要： A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0.0005 to about 1 moles/kilogram of periodic acid, from about 0.2% to about 6% % by weight of silica abrasive having an average particle size of about 50 nm or less, and an amine in an amount sufficient to adjust the pH of the composition to between about 2.5 and 7. The removal selectivity of the ruthenium to a.low-K dielectric is greater than 20:1. Advantageously, the substrate further has a tantalum-containing compound, and the polishing rate of the tantalum-containing compound is about the same as the polishing rate of the ruthenium, so that the polishing process is a one-step process.

摘要翻译： 一种抛光其上具有至少一个钌特征的半导体衬底表面和至少一种电介质材料的方法，其中所述衬底与含有约0.0005至约1摩尔/千克高碘酸的水性组合物接触，约0.2％至 约6重量％的平均粒度为约50nm或更小的二氧化硅磨料，以及足以将组合物的pH调节至约2.5至7的量的胺。钌对于 低K电介质大于20：1。 有利的是，基板还含有含钽化合物，并且含钽化合物的抛光速率与钌的抛光速率大致相同，因此抛光过程是一步法。