公开(公告)号：US6159846A

公开(公告)日：2000-12-12

申请号：US936398

申请日：1997-09-29

Applicant: Seong-Wook Yoo

Inventor： Seong-Wook Yoo

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L21/44

CPC classification number: H01L21/28525 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The method of metallization in semiconductor devices provides a substrate having a conducting region and having an insulating layer formed on the substrate. The insulating layer has a contact hole which exposes the conducting region. Next, a silicon-containing metallization layer and a silicon-free metallization layer are sequentially formed on the insulating layer such that the silicon-containing metallization layer contacts the conducting region through the contact hole. After heat-treating the substrate, the two metallization layers are patterned.

Abstract translation: 半导体器件中的金属化方法提供了具有导电区域并且在基底上形成有绝缘层的衬底。 绝缘层具有露出导电区域的接触孔。 接下来，在绝缘层上顺序地形成含硅金属化层和无硅金属化层，使得含硅金属化层通过接触孔接触导电区域。 在对基底进行热处理之后，对两个金属化层进行图案化。