公开(公告)号：US06204083B1

公开(公告)日：2001-03-20

申请号：US09000407

申请日：1998-01-29

申请人： Setsuo Kodato ,  Seishiro Ohya ,  Shiro Karasawa ,  Hiroyasu Yuasa ,  Kenji Akimoto

发明人： Setsuo Kodato ,  Seishiro Ohya ,  Shiro Karasawa ,  Hiroyasu Yuasa ,  Kenji Akimoto

IPC分类号： H01L2100

CPC分类号： H05B3/10 ,  G01J3/108 ,  H05B3/0047 ,  H05B2203/032

摘要： In order, to manufacture a high-performance infrared-emitting element having high-speed thermal response characteristics and a high infrared emissivity, a bridge (heat-generating) portion having a separation space is formed on a silicon element substrate. The bridge portion is formed to have a thickness of 5 &mgr;m or less by doping boron as an impurity by ion implantation with a concentration distribution peak value of 1.5×1019 atoms/cm3 or more, and performing annealing under predetermined conditions for activating the impurity layer. In the infrared-emitting element manufactured in this manner, even if the bridge portion is made thin to improve the thermal response characteristics, the infrared emissivity does not decrease because of a high impurity concentration, and a large temperature modulation width can be obtained. In doping boron as the impurity by ion implantation, the dose is preferably set to 3.0×1014 ions/cm2 or more. To activate the impurity layer upon doping boron, the annealing is performed in the nitrogen gas atmosphere at a temperature of 1,100° C. to 1,200° C. for 5 min to 40 min and further in the wet oxygen atmosphere for about 25 min to 40 min. As a result, the doping concentration of boron by ion implantation and the activation of the impurity layer can be stably increased and enhanced.

摘要翻译： 为了制造具有高速热响应特性和高红外发射率的高性能红外发射元件，在硅元件基板上形成具有分离空间的桥（发热）部分。 通过以1.5×10 19原子/ cm 3以上的浓度分布峰值进行离子注入，通过掺杂硼作为杂质，形成5μm以下的厚度，并且在用于活化杂质层的规定条件下进行退火。 在以这种方式制造的红外线发射元件中，即使为了提高热响应特性使桥接部分变薄，由于杂质浓度高，红外线发射率也不会降低，并且可以获得大的温度调制宽度。 在通过离子注入掺杂硼作为杂质时，剂量优选设定为3.0×1014离子/ cm 2以上。 为了在掺杂硼时激活杂质层，退火在氮气气氛中在1100℃至1200℃的温度下进行5分钟至40分钟，并且在湿氧气氛中进一步在25分钟至40℃ 分钟 结果，可以稳定地提高和提高通过离子注入的硼的掺杂浓度和杂质层的活化。