公开(公告)号：US20130273724A1

公开(公告)日：2013-10-17

申请号：US13630148

申请日：2012-10-16

申请人： Seung Ki Joo

发明人： Seung Ki JOO ,  Chang Woo BYUN ,  Se Wan SON ,  Yong Woo LEE ,  Hyun Mo KANG ,  Seol Ah PARK ,  Woo Chang LIM ,  Tao LI ,  Seung Jae YUN ,  Sang Joo LEE

IPC分类号： H01L21/20

CPC分类号： H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L29/66757

摘要： Provided is a method of crystallizing an amorphous silicon thin film transistor and a method of fabricating a polycrystalline thin film transistor using the same, in which the polycrystalline thin film transistor indicating leakage current characteristics of a level that is applicable for active matrix organic light emitting diode displays (AMOLEDs) can be manufactured by using a silicide seed induced lateral crystallization (SILC) method. The amorphous silicon thin film transistor crystallizing method includes the steps of: forming an amorphous silicon layer on a substrate; forming an active region by patterning the amorphous silicon layer; forming a crystallization induced metal layer in both a source region and a drain region that are placed on both side ends of the active region; forming a number of dot-shaped metal silicide seeds on the surfaces of the source region and the drain region made of amorphous silicon by removing the crystallization induced metal layer; and crystallizing the active region formed of the amorphous silicon layer by heat-treating the substrate by using the metal silicide seeds as crystallization seeds.

摘要翻译： 提供了一种使非晶硅薄膜晶体管结晶的方法和使用其制造多晶薄膜晶体管的方法，其中指示可用于有源矩阵有机发光二极管的电平的漏电流特性的多晶薄膜晶体管 可以通过使用硅化物种子诱导横向结晶（SILC）方法来制造显示器（AMOLED）。 非晶硅薄膜晶体管结晶方法包括以下步骤：在基板上形成非晶硅层; 通过图案化所述非晶硅层形成有源区; 在放置在有源区的两侧端的源区和漏区中形成结晶诱导金属层; 通过除去结晶诱导的金属层，在源极区和由非晶硅制成的漏极区域的表面上形成多个点状金属硅化物晶种; 并且通过使用金属硅化物种子作为结晶种子对基底进行热处理，使由非晶硅层形成的活性区域结晶。