公开(公告)号：US06494958B1

公开(公告)日：2002-12-17

申请号：US09607100

申请日：2000-06-29

申请人： Shamouil Shamouilian ,  Jon M. McChesney ,  Kwok Manus Wong ,  Liang-Guo Wang ,  Alexander M. Veytser ,  Dennis S. Grimard

发明人： Shamouil Shamouilian ,  Jon M. McChesney ,  Kwok Manus Wong ,  Liang-Guo Wang ,  Alexander M. Veytser ,  Dennis S. Grimard

IPC分类号： C23C1600

CPC分类号： H01J37/32082 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/505

摘要： A process chamber 110 capable of processing a substrate 30 in a plasma of process gas. The chamber 110 comprises a support 200 having a dielectric 210 covering an electrode 220 and a conductor 230 below the electrode 220. A voltage supply 180 supplies a gas energizing voltage to the conductor 220, and the conductor is adapted to capacitively couple the voltage to the electrode 220 to energize the process gas. Alternatively, the voltage may be supplied to the electrode 220 through a connector 195 which can capacitively couple with the conductor 230. A DC power supply 190 may also provide an electrostatic chucking voltage to the electrode 220. In one version, the conductor 230 comprises an interposer 280.

摘要翻译： 能够处理处理气体的等离子体中的基板30的处理室110。 腔室110包括支撑件200，其具有覆盖电极220的电介质210和电极220下方的导体230.电压源180​​向导体220提供气体激励电压，并且导体适于将电压电容耦合到 电极220以使处理气体通电。 或者，电压可以通过能够与导体230电容耦合的连接器195提供给电极220.直流电源190还可以向电极220提供静电夹持电压。在一种形式中，导体230包括 插入器280。