公开(公告)号：US20250107232A1

公开(公告)日：2025-03-27

申请号：US18600804

申请日：2024-03-11

Applicant: Shanghai Tianma Micro-electronics Co., Ltd.

Inventor： Kaidi ZHANG ,  Baiquan LIN ,  Liying WANG ,  Linzhi WANG ,  Haotian LU ,  Kerui XI

IPC: H01L27/12

Abstract: A thin-film transistor structure and an electronic device are provided. The thin-film transistor structure includes a first transistor and a second transistor. A potential of the signal input electrode of the first transistor is greater than that of the signal receiving component, and the first transistor is turned on; and a potential of the signal input electrode of the second transistor is less than that of the signal receiving component, and the second transistor is turned on; and an overlapping area of the signal output electrode of the first transistor and the etching barrier layer is greater than that of the signal input electrode of the first transistor and the etching barrier layer; and an overlapping area of the signal input electrode of the second transistor and the etching barrier layer is larger than that of the signal output electrode of the second transistor and the etching barrier layer.