公开(公告)号：US20250085253A1

公开(公告)日：2025-03-13

申请号：US18613167

申请日：2024-03-22

Applicant: Shanghai Tianma Micro-electronics Co., Ltd.

Inventor： Yukun HUANG ,  Shun GONG ,  Haotian LU ,  Linzhi WANG ,  Kaidi ZHANG ,  Baiquan LIN ,  Kerui XI ,  Feng QIN

IPC: G01N27/414 ,  B01L3/00

Abstract: A micro-fluidic detection device includes a first base plate, a second base plate opposite to the first base plate, and a droplet travel layer located between the first and second base plates. The first base plate includes a first substrate, a drive array layer, a first electrode layer, and a first hydrophobic layer. The second base plate includes a second substrate, a second electrode layer, and a second hydrophobic layer. Drive electrodes of the first electrode layer are at first units. The first unit includes a micro-fluidic unit circuit. A second unit includes a detection unit circuit. The detection unit circuit includes inorganic transistors and organic transistors. A sensitive electrode is at the second unit. The sensitive electrode is on a side of a layer where the inorganic transistor is located away from the first substrate. A first hollow hole of the first base plate exposes the sensitive electrode.

公开(公告)号：US20250107232A1

公开(公告)日：2025-03-27

申请号：US18600804

申请日：2024-03-11

Applicant: Shanghai Tianma Micro-electronics Co., Ltd.

Inventor： Kaidi ZHANG ,  Baiquan LIN ,  Liying WANG ,  Linzhi WANG ,  Haotian LU ,  Kerui XI

IPC: H01L27/12

Abstract: A thin-film transistor structure and an electronic device are provided. The thin-film transistor structure includes a first transistor and a second transistor. A potential of the signal input electrode of the first transistor is greater than that of the signal receiving component, and the first transistor is turned on; and a potential of the signal input electrode of the second transistor is less than that of the signal receiving component, and the second transistor is turned on; and an overlapping area of the signal output electrode of the first transistor and the etching barrier layer is greater than that of the signal input electrode of the first transistor and the etching barrier layer; and an overlapping area of the signal input electrode of the second transistor and the etching barrier layer is larger than that of the signal output electrode of the second transistor and the etching barrier layer.

公开(公告)号：US20240170589A1

公开(公告)日：2024-05-23

申请号：US18430848

申请日：2024-02-02

Applicant: Shanghai Tianma Micro-Electronics Co., Ltd.

Inventor： Fan XU ,  Bin ZHOU ,  Haotian LU ,  Kaidi ZHANG ,  Linzhi WANG ,  Zhen LIU ,  Baiquan LIN ,  Kerui XI

IPC: H01L31/0232 ,  H01L27/144 ,  H01L31/113

CPC classification number: H01L31/02325 ,  H01L27/1446 ,  H01L31/1136

Abstract: Provided are a photoelectric sensor and an electronic device. The photoelectric sensor includes a substrate, a plurality of photoelectric sensing elements, and a wall structure between two adjacent photoelectric sensing elements. The wall structure includes a first layer and a second layer stacked with the first layer. The first layer is arranged at a side of the second layer away from the substrate and includes a light-blocking material. At least one of the first layer or the second layer of the wall structure is arranged in a same layer as at least one layer of the photoelectric sensing element.

公开(公告)号：US20240144891A1

公开(公告)日：2024-05-02

申请号：US18408053

申请日：2024-01-09

Applicant: Shanghai Tianma Micro-Electronics Co., Ltd.

Inventor： Haotian LU ,  Linzhi WANG ,  Baiquan LIN ,  Zhen LIU ,  Kerui XI ,  Kaidi ZHANG ,  Yifan XING ,  Xin XU ,  Huijun JIN

IPC: G09G3/34 ,  G02F1/167 ,  G02F1/1685

CPC classification number: G09G3/344 ,  G02F1/167 ,  G02F1/1685 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/0262 ,  G09G2310/08

Abstract: Provided are a driver board, a display panel, and a display apparatus. The driver board includes a driver circuit. The driver circuit includes N pixel electrodes, N pixel switches, a data switch, and a storage capacitor, N is a positive integer, and N≥2. The storage capacitor includes a reference electrode and a counter electrode. A control terminal of the pixel switch receives a gating signal, a first terminal of the pixel switch is connected to the counter electrode, and a second terminal of the pixel switch is connected to the pixel electrode. The driver board further includes data lines, and each data line is connected to the counter electrode via the data switch.

公开(公告)号：US20240364327A1

公开(公告)日：2024-10-31

申请号：US18405719

申请日：2024-01-05

Applicant: Shanghai Tianma Micro-electronics Co., Ltd.

Inventor： Kaidi ZHANG ,  Baiquan LIN ,  Wei LI ,  Dongli ZHANG ,  Linzhi WANG ,  Haotian LU ,  Kerui XI

IPC: H03K17/56 ,  H03K19/20

CPC classification number: H03K17/56 ,  H03K19/20

Abstract: Driving circuit, microfluidic driving device and driving method are provided. The driving circuit includes a data writing module, a first inverter and a second inverter. An output terminal of the data writing module is connected to a first node. A first terminal of the first inverter is connected to a first power supply terminal, a second terminal of the first inverter is connected to a second power supply terminal, an input terminal of the first inverter is connected to the first node, and an output terminal of the first inverter is connected to a second node. A first terminal of the second inverter is connected to the first power supply terminal, a second terminal of the second inverter is connected to the second power supply terminal, and an input terminal of the second inverter is connected to the second node.

公开(公告)号：US20240128283A1

公开(公告)日：2024-04-18

申请号：US18090202

申请日：2022-12-28

Applicant: Shanghai Tianma Micro-electronics Co., Ltd.

Inventor： Haotian LU ,  Linzhi WANG ,  Baiquan LIN ,  Kerui XI ,  Shun GONG ,  Yukun HUANG ,  Fan XU ,  Kaidi ZHANG

IPC: H01L27/146 ,  G01N21/64

CPC classification number: H01L27/14603 ,  G01N21/645 ,  G01N21/6428

Abstract: A detection substrate including a substrate and a plurality of detection units disposed on a side of the substrate, each detection unit including at least an inorganic transistor, an organic transistor, and a photoelectric sensor element, the organic transistor including an organic semiconductor part, in a direction perpendicular to a plane of the substrate, a film layer where the organic semiconductor part is located being located on the side of the film layer where the inorganic transistor is located away from the substrate, the film layer where the organic semiconductor part is located being located on the side of a film layer where the photoelectric sensor element is located away from the substrate, the organic transistor of the detection unit being connected to a sensing electrode, the sensing electrode being located on the side of the film layer where the inorganic transistor is located away from the substrate.

公开(公告)号：US20230361769A1

公开(公告)日：2023-11-09

申请号：US18351282

申请日：2023-07-12

Applicant: Shanghai Tianma Micro-Electronics Co., Ltd.

Inventor： Yukun HUANG ,  Linzhi WANG ,  Kerui XI ,  Baiquan LIN ,  Zhenyu JIA ,  Aowen LI ,  Haotian LU

IPC: G01D11/00 ,  H03K17/56

CPC classification number: H03K17/56 ,  G01D11/00

Abstract: Provided are a sensing circuit and a sensing method thereof, a sensor chip, and a display panel. The sensing circuit includes a first transistor including a first gate and a second gate, a first capacitor, a read circuit, and a bias compensation circuit. The first gate receives a sensing signal outputted by a sensor. The first capacitor is connected between the second gate and a first fixed potential signal terminal. The read circuit is connected between the first transistor and an output terminal of the sensing circuit. The bias compensation circuit is electrically connected to the first transistor and configured to input a bias voltage into the second gate of the first transistor. The bias voltage received by the second gate reduce the threshold voltage drift of the first transistor.