公开(公告)号：US06576526B2

公开(公告)日：2003-06-10

申请号：US09900398

申请日：2001-07-09

申请人： Shao Kai ,  Wu-Guan Ping ,  Chen Liang ,  Cheng-Wei Hua ,  Sanford Chu ,  Daniel Yen

发明人： Shao Kai ,  Wu-Guan Ping ,  Chen Liang ,  Cheng-Wei Hua ,  Sanford Chu ,  Daniel Yen

IPC分类号： H01L2120

CPC分类号： H01L28/55 ,  H01L21/31122 ,  H01L21/32136

摘要： A new processing sequence is provided for the creation of a MIM capacitor. The process starts with the deposition of a first layer of metal. Next are deposited listed, a thin layer of metal, a layer of insulation, a second layer of metal and a layer of Anti Reflective Coating. An etch is then performed to form the second electrode of the MIM capacitor (using the etch stop layer to stop this etch), MIM spacers are formed on the sidewalls of the second electrode of the MIM capacitor (also using the etch stop layer to stop this etch). The dielectric and first electrode of the MIM capacitor are formed by etching through the second layer of insulation and the first layer of metal. This is followed by conventional processing to create contact points to the MIM capacitor.

摘要翻译： 为MIM电容器的创建提供了新的处理顺序。 该过程开始于沉积第一层金属。 接下来是沉积列表，薄层金属，一层绝缘层，第二层金属和一层抗反射涂层。 然后进行蚀刻以形成MIM电容器的第二电极（使用蚀刻停止层来停止该蚀刻），MIM间隔物形成在MIM电容器的第二电极的侧壁上（也使用蚀刻停止层停止 这个蚀刻）。 MIM电容器的电介质和第一电极通过蚀刻穿过第二绝缘层和第一金属层而形成。 接下来是常规处理以产生与MIM电容器的接触点。