LED bar
    2.
    发明授权
    LED bar 有权
    LED条

    公开(公告)号:US08783895B2

    公开(公告)日:2014-07-22

    申请号:US13469549

    申请日:2012-05-11

    摘要: An LED device in which LED groups are located on a pixel board has calibration data for each LED stored both electrically and mechanically close to the actual LED. Preferably, each LED group has a number of LEDs of different colors on the pixel board, being electrically connected to a color controller. The color controller is connected to a power supply, and the pixel board has a memory circuit having the LED calibration data related to the LEDs stored therein. The color controller controls LEDs for generating light based on the LED calibration data stored in the memory circuit on said pixel board. Preferably, at least one of the LEDs is formed on a chip that contains the memory circuit for storing the calibration data.

    摘要翻译: 其中LED组位于像素板上的LED装置具有针对存储在实际上和机械上靠近实际LED的每个LED的校准数据。 优选地,每个LED组在像素板上具有不同颜色的多个LED,电连接到颜色控制器。 颜色控制器连接到电源,并且像素板具有存储电路,其具有与存储在其中的LED相关的LED校准数据。 颜色控制器基于存储在所述像素板上的存储器电路中的LED校准数据来控制用于产生光的LED。 优选地,至少一个LED形成在包含用于存储校准数据的存储器电路的芯片上。

    Power transistor with high voltage counter implant
    3.
    发明授权
    Power transistor with high voltage counter implant 有权
    功率晶体管与高压计数器植入

    公开(公告)号:US08673712B2

    公开(公告)日:2014-03-18

    申请号:US13554880

    申请日:2012-07-20

    摘要: Presented herein is a field effect transistor device, optionally a lateral power transistor, and a method for forming the same, comprising providing a substrate, creating a doped buried layer, and creating a primary well in the substrate on the buried layer. A drift drain may be created in the primary well and a counter implant region implanted in the primary well and between the drift drain and the buried layer. The primary well may comprise a first and second implant region with the second implant region at a depth less than the first. The counter implant may be at a depth between the first and second implant regions. The primary well and counter implant region may comprise dopants of the same conductivity type, or both p+-type dopants. A gate may be formed over a portion of a drift drain.

    摘要翻译: 这里呈现的是场效应晶体管器件,可选地是侧向功率晶体管及其形成方法,包括提供衬底,产生掺杂掩埋层,以及在掩埋层上的衬底中产生初级阱。 可以在主阱中产生漂移漏极,并且在初级阱中以及漂移漏极和埋层之间注入计数器注入区域。 主阱可以包括第一和第二注入区域,其中第二注入区域的深度小于第一注入区域。 计数器植入物可以处于第一和第二植入区域之间的深度。 主阱和计数器注入区域可以包括相同导电类型的掺杂剂,或者两种p +型掺杂剂。 栅极可以形成在漂移漏极的一部分上。

    Electronic device and sliding assembly thereof
    6.
    发明授权
    Electronic device and sliding assembly thereof 有权
    电子装置及其滑动组件

    公开(公告)号:US08199478B2

    公开(公告)日:2012-06-12

    申请号:US12551622

    申请日:2009-09-01

    IPC分类号: G06F1/16

    CPC分类号: H04M1/0237 H04M1/0216

    摘要: An electronic device includes an upper cover and a main body. A sliding assembly is disposed between the upper cover and the main body and includes a sliding portion, a spring, and a track with a first positioning portion disposed at the center of a side of the track and two second positionings portion disposed on two ends of the side of the track. The spring including an engaging portion and two ends, and the sliding portion are fixed on the cover. The engaging portion and the ends form an included angle. The sliding portion is movably connected to the track and slides thereon. When the sliding portion slides on the track, the engaging portion is engaged with one of the first positioning portion and the second positioning portions.

    摘要翻译: 电子设备包括上盖和主体。 滑动组件设置在上盖和主体之间,并且包括滑动部分,弹簧和轨道,其中第一定位部分设置在轨道的一侧的中心,并且两个第二定位部分设置在轨道的两端 轨道的一边。 弹簧包括接合部分和两个端部,并且滑动部分固定在盖子上。 接合部分和端部形成夹角。 滑动部分可移动地连接到轨道并在其上滑动。 当滑动部分在轨道上滑动时,接合部分与第一定位部分和第二定位部分中的一个接合。

    STRUCTURE FOR ADJUSTING BACKLIGHT bRIGHTNESS OF ELECTRONIC APPARATUS
    7.
    发明申请
    STRUCTURE FOR ADJUSTING BACKLIGHT bRIGHTNESS OF ELECTRONIC APPARATUS 审中-公开
    用于调节电子装置的背光亮度的结构

    公开(公告)号:US20120105491A1

    公开(公告)日:2012-05-03

    申请号:US12938935

    申请日:2010-11-03

    IPC分类号: G09G5/10

    CPC分类号: G09G3/34 G09G2360/144

    摘要: A structure for adjusting backlight brightness of an electronic apparatus includes an indicator cover with an optical window and a light detecting circuit board. The indicator cover with an optical window has a window disposed thereon. The light detecting circuit board is installed in the indicator cover with an optical window and disposed correspondingly to the window. In addition, the light detecting circuit board is electrically connected to the backlight module of the electronic apparatus and has a light detecting circuit disposed thereon. The light detecting circuit has a control unit, a light emitting unit, a driving unit, and a storage unit. The light emitting unit has a light emitting component inside the indicator cover and an ambient light detecting unit. Therefore, the control unit controls the light emitting component inside the indicator cover flickering, and a detecting signal is transmitted to the control unit and then compared to the stored parameter, thus adjusting backlight brightness according to the stored parameter by the control unit when the light emitting component inside the indicator cover is not lighted and then the ambient light detecting unit receives external ambient light through the window.

    摘要翻译: 用于调整电子设备的背光亮度的结构包括具有光学窗口的指示器盖和光检测电路板。 具有光学窗口的指示器盖具有设置在其上的窗口。 光检测电路板安装在具有光学窗口的指示器盖中并相应于窗口设置。 此外,光检测电路板电连接到电子设备的背光模块,并具有设置在其上的光检测电路。 光检测电路具有控制单元,发光单元,驱动单元和存储单元。 发光单元在指示器盖内部具有发光元件和环境光检测单元。 因此,控制单元控制指示器盖内的发光元件闪烁,并且将检测信号发送到控制单元,然后与存储的参数进行比较,从而根据控制单元存储的参数调节背光亮度,当光 指示器盖内的发光元件不亮,然后环境光检测单元通过窗口接收外部环境光。

    SEMICONDUCTOR DEVICE WITH BIPOLAR TRANSISTOR AND CAPACITOR
    8.
    发明申请
    SEMICONDUCTOR DEVICE WITH BIPOLAR TRANSISTOR AND CAPACITOR 审中-公开
    具有双极晶体管和电容器的半导体器件

    公开(公告)号:US20110272783A1

    公开(公告)日:2011-11-10

    申请号:US13090347

    申请日:2011-04-20

    IPC分类号: H01L29/92

    CPC分类号: H01L27/0658 H01L28/40

    摘要: A semiconductor device with a bipolar transistor and a capacitor that has a down-sized circuit area is presented. During the manufacture of the bipolar transistor, a polysilicon-insulator-polysilicon capacitor, a polysilicon-insulator-metal layer or a metal-insulator-metal capacitor can be formed on the isolating insulator and/or the protective insulator to achieve reduced circuit area, less manufacturing steps and lowered manufacturing cost.

    摘要翻译: 提出了具有双极性晶体管的半导体器件和具有下降电路面积的电容器。 在制造双极晶体管期间,可以在隔离绝缘体和/或保护绝缘体上形成多晶硅 - 绝缘体 - 多晶硅电容器,多晶硅 - 绝缘体 - 金属层或金属 - 绝缘体 - 金属电容器,以实现减小的电路面积, 较少的制造步骤和降低的制造成本。

    SOLAR CELL MODULE
    9.
    发明申请
    SOLAR CELL MODULE 审中-公开
    太阳能电池模块

    公开(公告)号:US20110265850A1

    公开(公告)日:2011-11-03

    申请号:US13184033

    申请日:2011-07-15

    IPC分类号: H01L31/05

    摘要: A solar cell module. In one embodiment, the solar cell module includes a substrate, a battery unit, a first strip electrode and a second strip electrode. The substrate has a plurality of power generation zones and at least one cutting zone, and the cutting zone is located among the power generation zones. The battery unit is disposed on the power generation zones and the cutting zones of the substrate. The first strip electrode is disposed on the battery unit, and located at a first end power generation zone of the power generation zones. The second strip electrode is disposed on the battery unit, and located at a second end power generation zone of the power generation zones.

    摘要翻译: 太阳能电池模块。 在一个实施例中,太阳能电池模块包括基板,电池单元,第一带状电极和第二带状电极。 基板具有多个发电区域和至少一个切割区域,切断区域位于发电区域之间。 电池单元设置在发电区域和基板的切割区域上。 第一带状电极设置在电池单元上,并且位于发电区的第一端发电区。 第二带状电极设置在电池单元上,位于发电区的第二端发电区。

    Alternating-doping profile for source/drain of a FET
    10.
    发明授权
    Alternating-doping profile for source/drain of a FET 有权
    FET的源极/漏极的交替掺杂分布

    公开(公告)号:US07977743B2

    公开(公告)日:2011-07-12

    申请号:US12392343

    申请日:2009-02-25

    IPC分类号: H01L29/06

    摘要: A semiconductor device is provided. In an embodiment, the device includes a substrate and a transistor formed on the substrate. The transistor may include a gate structure, a source region, and a drain region. The drain region includes an alternating-doping profile region. The alternating-doping profile region may include alternating regions of high and low concentrations of a dopant. In an embodiment, the transistor is a high voltage transistor.

    摘要翻译: 提供半导体器件。 在一个实施例中,该器件包括衬底和形成在衬底上的晶体管。 晶体管可以包括栅极结构,源极区和漏极区。 漏极区域包括交替掺杂分布区域。 交变掺杂剖面区域可以包括掺杂剂的高浓度和低浓度的交替区域。 在一个实施例中,晶体管是高压晶体管。