公开(公告)号：US12224303B2

公开(公告)日：2025-02-11

申请号：US18197117

申请日：2023-05-15

Applicant: Sharp Display Technology Corporation

Inventor： Makoto Nakazawa ,  Hiroyuki Moriwaki ,  Rikiya Takita ,  Tetsuya Tanishima

IPC: H01L27/146 ,  G01T1/20

Abstract: In a manufacturing method of a photoelectric conversion panel, a contact hole CH3 that exposes a part of an upper face of a photodiode and a contact hole CH2 that exposes a source connection electrode are formed in a first flattening film and in inorganic insulating films 105a to 105c, an inorganic insulating film 107 is formed, contact holes CH2a and CH3a are formed in the contact holes CH2 and CH3, respectively, and a bias line and a data line are formed in the contact holes CH2a and CH3a, respectively.

公开(公告)号：US11916094B2

公开(公告)日：2024-02-27

申请号：US17391747

申请日：2021-08-02

Applicant: Sharp Display Technology Corporation

Inventor： Hiroyuki Moriwaki ,  Makoto Nakazawa ,  Tetsuya Tanishima ,  Rikiya Takita

IPC: H01L27/146

CPC classification number: H01L27/14663 ,  H01L27/14612 ,  H01L27/14689 ,  H01L27/14692

Abstract: A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; and a first inorganic insulating film formed so as to cover at least a part of the first organic film, wherein the first inorganic insulating film has a through hole that exposes a part of the first organic film.

公开(公告)号：US20250022907A1

公开(公告)日：2025-01-16

申请号：US18736459

申请日：2024-06-06

Applicant: Sharp Display Technology Corporation

Inventor： Rikiya TAKITA ,  Fumiki Nakano ,  Makoto Nakazawa ,  Hiroyuki Moriwaki

IPC: H01L27/146

Abstract: A manufacturing method of a photoelectric conversion panel includes forming a short ring, forming a plurality of data lines connected to a TFT and the short ring, forming a first conductive portion of a bias line connected to the photodiode in an upper layer above the photodiode, electrically blocking the short ring and the TFT from each other by cutting the plurality of data lines after the forming of the first conductive portion, and forming an inorganic insulating film in a blocking portion created by the plurality of data lines being cut.