公开(公告)号：US20190067912A1

公开(公告)日：2019-02-28

申请号：US15683188

申请日：2017-08-22

Applicant: Sharp Kabushiki Kaisha

Inventor： Alex YUDIN ,  Yoshihiko TANI ,  Valerie BERRYMAN-BOUSQUET ,  Shigetoshi ITO

IPC: H01S5/343 ,  H01S5/34 ,  H01S5/22

Abstract: A group III nitride based laser light emitting device includes an n-side group III nitride based semiconductor region, a p-side group III nitride based semiconductor region, and a group III nitride based active region between the p-side group III nitride based semiconductor region and n-side group III nitride based semiconductor region. The group III nitride based active region includes first and second quantum well layers and a barrier layer between the first and second quantum well layers, the respective compositions of the first and second quantum well layers comprising different respective amounts of indium. The first quantum well is closer to the n-side group III nitride based semiconductor region than the second quantum well, the second quantum well is closer to the p-side group III nitride based semiconductor region than the first quantum well, and the first quantum well has a larger band gap than the second quantum well.