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    LIGHT PROJECTING DEVICE AND VEHICULAR HEADLAMP
    2.
    发明申请
    LIGHT PROJECTING DEVICE AND VEHICULAR HEADLAMP 审中-公开
    光投射装置和车辆头灯

    公开(公告)号：US20150308644A1

    公开(公告)日：2015-10-29

    申请号：US14791082

    申请日：2015-07-02

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Koji TAKAHASHI ,  Shigetoshi ITO ,  Yoshiyuki TAKAHIRA

    IPC: F21S8/10

    CPC classification number: F21S48/125 ,  F21S41/143 ,  F21S41/147 ,  F21S41/16 ,  F21S41/25 ,  F21S41/321 ,  F21Y2101/00 ,  F21Y2113/10 ,  F21Y2115/10 ,  F21Y2115/30

    Abstract: A light projecting device of the present invention includes: a light source unit including (i) a laser element for emitting light, (ii) a light converging lens for converging the light emitted from the laser element, and (iii) a light emitting section for emitting light upon receipt of the light converged by the light converging lens; and a reflector for projecting light emitted from the light source unit. The light source unit is provided so as to be attached to or detached from a fixed part to which the light source unit is to be fixed.

    Abstract translation: 本发明的投光装置包括：光源单元，包括：（i）用于发光的激光元件;（ii）会聚透镜，用于会聚来自激光元件的光;以及（iii）发光部 用于在接收到由会聚透镜会聚的光时发光; 以及用于投射从光源单元发射的光的反射器。 光源单元被设置为附接到要固定光源单元的固定部分或从其拆卸。

    GaN-BASED LASER DEVICE
    3.
    发明申请
    GaN-BASED LASER DEVICE 有权
    基于GaN的激光器件

    公开(公告)号：US20140010252A1

    公开(公告)日：2014-01-09

    申请号：US14020519

    申请日：2013-09-06

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Toshiyuki KAWAKAMI ,  Tomoki ONO ,  Shigetoshi ITO ,  Susumu OMI

    IPC: H01S5/22

    CPC classification number: H01S5/22 ,  H01S5/10 ,  H01S5/32341 ,  H01S2301/176

    Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

    Abstract translation: 在具有包括发光层的GaN基半导体层叠结构的GaN基激光器件中，半导体层叠结构包括引起条状波导的脊条状结构，并且具有彼此相对的侧表面， 在其宽度方向夹着条形波导。 处理至少一个侧表面的至少一部分以防止条形波导在宽度方向上作为法布里 - 珀罗共振器起作用。

    SEMICONDUCTOR LASER DIODE WITH LOW THRESHOLD CURRENT
    4.
    发明申请
    SEMICONDUCTOR LASER DIODE WITH LOW THRESHOLD CURRENT 审中-公开

    公开(公告)号：US20190067912A1

    公开(公告)日：2019-02-28

    申请号：US15683188

    申请日：2017-08-22

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Alex YUDIN ,  Yoshihiko TANI ,  Valerie BERRYMAN-BOUSQUET ,  Shigetoshi ITO

    IPC: H01S5/343 ,  H01S5/34 ,  H01S5/22

    Abstract: A group III nitride based laser light emitting device includes an n-side group III nitride based semiconductor region, a p-side group III nitride based semiconductor region, and a group III nitride based active region between the p-side group III nitride based semiconductor region and n-side group III nitride based semiconductor region. The group III nitride based active region includes first and second quantum well layers and a barrier layer between the first and second quantum well layers, the respective compositions of the first and second quantum well layers comprising different respective amounts of indium. The first quantum well is closer to the n-side group III nitride based semiconductor region than the second quantum well, the second quantum well is closer to the p-side group III nitride based semiconductor region than the first quantum well, and the first quantum well has a larger band gap than the second quantum well.

    NITRIDE SEMICONDUCTOR CRYSTAL
    5.
    发明申请
    NITRIDE SEMICONDUCTOR CRYSTAL 有权
    氮化物半导体晶体

    公开(公告)号：US20140145202A1

    公开(公告)日：2014-05-29

    申请号：US14087588

    申请日：2013-11-22

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Shigetoshi ITO

    IPC: H01L29/20 ,  H01L21/20

    CPC classification number: H01L29/2003 ,  C23C16/18 ,  C23C16/34 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/207

    Abstract: A method of producing a nitride semiconductor crystal uses a metal organic chemical vapor deposition process and offers good controllability with respect to a p-type nitride semiconductor crystal. To that end, an organic metal compound of a group III element, a hydride of nitrogen, and an organic compound having any of the partial structures C—C—O, C—C═O, C═C—O, C═C═O, C≡C—O, and C—O—C are used as source materials, and by a metal organic chemical vapor deposition process, C and O atoms are simultaneously introduced into the crystal to obtain p-type conductivity.

    Abstract translation: 氮化物半导体晶体的制造方法使用金属有机化学气相沉积工艺，并且对p型氮化物半导体晶体提供良好的可控性。 为此，可以使用III族元素的有机金属化合物，氮的氢化物和具有部分结构C-C-O，C-C = O，C = C-O，C = C 使用≡O，C≡C-O和C-O-C作为原料，通过金属有机化学气相沉积工艺，将C和O原子同时引入晶体以获得p型导电性。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    7.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20170179342A1

    公开(公告)日：2017-06-22

    申请号：US15375333

    申请日：2016-12-12

    Applicant: Sharp Kabushiki Kaisha

    Inventor： Makoto SAWAMURA ,  Shuhichiroh YAMAMOTO ,  Shigetoshi ITO

    IPC: H01L33/32 ,  H01L33/00 ,  H01L33/38 ,  H01L33/20 ,  H01L33/62

    CPC classification number: H01L33/32 ,  H01L33/0008 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62

    Abstract: A semiconductor light-emitting device includes a first conductivity-type semiconductor including a first electrode on a first main surface, a second conductivity-type semiconductor, and an active layer between a second main surface of the first conductivity-type semiconductor and a first main surface of the second conductivity-type semiconductor. Protrusions are disposed in at least part of a region of a second main surface of the second conductivity-type semiconductor facing the first electrode. A second electrode is disposed in at least part of a region of the second main surface of the second conductivity-type semiconductor except the region having the protrusions. The protrusions containing a dielectric material protrude from the second main surface of the second conductivity-type semiconductor in a direction away from the active layer and are separated by intervals longer than the wavelength of light emitted from the active layer in the medium of the protrusions.

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