公开(公告)号：US20210111218A1

公开(公告)日：2021-04-15

申请号：US16498499

申请日：2018-03-28

Applicant: Sharp Kabushiki Kaisha

Inventor： Yu NAKAMURA ,  Kazuhide TOMIYASU ,  Makoto NAKAZAWA ,  Hiroyuki MORIWAKI ,  Wataru NAKAMURA ,  Fumiki NAKANO

IPC: H01L27/146 ,  G01T1/20

Abstract: Provided are an X-ray imaging panel capable of suppressing a leak current of a photoelectric conversion layer while reducing the number of steps for manufacturing the imaging panel, and a method for manufacturing the same. An imaging panel 1 generates an image based on scintillation light obtained from X-rays passing through a subject. The imaging panel 1 is provided with a thin film transistor 13, passivation films 103 and 104 covering the thin film transistor 13, a photoelectric conversion layer 15 converting scintillation light into a charge, an upper electrode 16, and a lower electrode 14 connected to the thin film transistor 13, on a substrate 101. End portions of the lower electrode 14 are disposed on an inner side than the end portions of the photoelectric conversion layer 15. The lower electrode 14 and the thin film transistor 13 are connected to each other via a contact hole CH1 formed in the passivation films 103 and 104, in a region in which the photoelectric conversion layer 15 is provided.