公开(公告)号：US20090137113A1

公开(公告)日：2009-05-28

申请号：US11946831

申请日：2007-11-28

申请人： Sheng Hung Li ,  Siew-Seong Tan ,  Cheng-Yen Liu ,  Li-Ken Yeh

发明人： Sheng Hung Li ,  Siew-Seong Tan ,  Cheng-Yen Liu ,  Li-Ken Yeh

IPC分类号： H01L21/4763

CPC分类号： B81C1/00801 ,  B81C2201/0107 ,  B81C2201/014

摘要： A method for fabricating a microstructure is to form at least one insulation layer including a micro-electro-mechanical structure therein over an upper surface of a silicon substrate. The micro-electro-mechanical structure includes at least one microstructure and a metal sacrificial structure that are independent with each other. In the metal sacrificial structure are formed a plurality of metal layers and a plurality of metal via layers connected to the respective metal layers. A barrier layer is formed over an upper surface of the insulation layer, and an etching stop layer is subsequently formed over a lower surface of the silicon substrate. An etching operation is carried out from the lower surface of the silicon substrate to form a space corresponding to the micro-electro-mechanical structure, and then the metal sacrificial structure is etched, thus achieving a microstructure suspension.

摘要翻译： 用于制造微结构的方法是在硅衬底的上表面上形成包括微​​电子机械结构的至少一个绝缘层。 微电子机械结构包括彼此独立的至少一个微结构和金属牺牲结构。 在金属牺牲结构中形成多个金属层和连接到各个金属层的多个金属通孔层。 在绝缘层的上表面上形成阻挡层，随后在硅衬底的下表面上形成蚀刻停止层。 从硅衬底的下表面进行蚀刻操作以形成与微电子机械结构相对应的空间，然后蚀刻金属牺牲结构，从而实现微结构悬浮。

公开(公告)号：US07666702B2

公开(公告)日：2010-02-23

申请号：US11946831

申请日：2007-11-28

申请人： Sheng-Hung Li ,  Siew-Seong Tan ,  Cheng-Yen Liu ,  Li-Ken Yeh

发明人： Sheng-Hung Li ,  Siew-Seong Tan ,  Cheng-Yen Liu ,  Li-Ken Yeh

IPC分类号： H01L21/00 ,  H01L21/4763 ,  G02B26/00

CPC分类号： B81C1/00801 ,  B81C2201/0107 ,  B81C2201/014

摘要： A method for fabricating a microstructure is to form at least one insulation layer including a micro-electro-mechanical structure therein over an upper surface of a silicon substrate. The micro-electro-mechanical structure includes at least one microstructure and a metal sacrificial structure that are independent with each other. In the metal sacrificial structure are formed a plurality of metal layers and a plurality of metal via layers connected to the respective metal layers. A barrier layer is formed over an upper surface of the insulation layer, and an etching stop layer is subsequently formed over a lower surface of the silicon substrate. An etching operation is carried out from the lower surface of the silicon substrate to form a space corresponding to the micro-electro-mechanical structure, and then the metal sacrificial structure is etched, thus achieving a microstructure suspension.

摘要翻译： 用于制造微结构的方法是在硅衬底的上表面上形成包括微​​电子机械结构的至少一个绝缘层。 微电子机械结构包括彼此独立的至少一个微结构和金属牺牲结构。 在金属牺牲结构中形成多个金属层和连接到各个金属层的多个金属通孔层。 在绝缘层的上表面上形成阻挡层，随后在硅衬底的下表面上形成蚀刻停止层。 从硅衬底的下表面进行蚀刻操作以形成与微电子机械结构相对应的空间，然后蚀刻金属牺牲结构，从而实现微结构悬浮。