摘要:
In a step of forming the under layer, the under layer is formed while an insulating substrate is supported by support members made of a conductive material. In a step of forming a recording layer, the insulating substrate remains supported. A movable electrode is urged into contact with an end face of the insulating substrate. The recording layer is formed by a sputtering process while a negative bias voltage is applied. Since the under layer is formed on the end face of the substrate, the electric conduction between the movable electrode and the under layer is good. Moreover, the under layer formed on the surface of the substrate is bridged to a part of a contact section of the support springs. Therefore, the support springs and the under layer is electrically connected. A bias voltage is applied to the under layer through the movable electrode and the support springs.
摘要:
In a step of forming the under layer, the under layer is formed while an insulating substrate is supported by support members made of a conductive material. In a step of forming a recording layer, the insulating substrate remains supported. A movable electrode is urged into contact with an end face of the insulating substrate. The recording layer is formed by a sputtering process while a negative bias voltage is applied. Since the under layer is formed on the end face of the substrate, the electric conduction between the movable electrode and the under layer is good. Moreover, the under layer formed on the surface of the substrate is bridged to a part of a contact section of the support springs. Therefore, the support springs and the under layer is electrically connected. A bias voltage is applied to the under layer through the movable electrode and the support springs.
摘要:
A surface processing method of processing a surface of a substrate includes disposing the substrate in a vacuum chamber, processing by applying a high-frequency voltage to the substrate and by sputtering the surface of the substrate, measuring a cathode drop potential generated at the substrate in the processing and obtaining a time integration value of the cathode drop potential, and determining whether or not a processed state of the surface of the substrate is good based on the time integration value obtained in the measuring.