公开(公告)号：US08933509B2

公开(公告)日：2015-01-13

申请号：US13023427

申请日：2011-02-08

申请人： Shin Gyu Choi ,  Seung Chul Oh

发明人： Shin Gyu Choi ,  Seung Chul Oh

IPC分类号： H01L29/78 ,  H01L21/8234 ,  H01L29/66

CPC分类号： H01L21/823487 ,  H01L21/823412 ,  H01L21/823437 ,  H01L29/66621

摘要： A semiconductor device includes a device isolation structure, a recess channel structure, a first lower gate conductive layer conformal to the recess channel structure and defining a recess, a holding layer over the first lower gate conductive layer to fill the recess defined by the first lower gate conductive layer, and a second lower gate conductive layer over the first lower gate conductive layer and the holding layer. The holding layer is configured to hold a shift of the seam occurring in the recess channel structure.

摘要翻译： 半导体器件包括器件隔离结构，凹槽通道结构，与凹槽通道结构保形并限定凹陷的第一下栅极导电层，在第一下栅极导电层上方的保持层，以填充由第一下部栅极导电层限定的凹部 栅极导电层和在第一下栅极导电层和保持层上的第二下部栅极导电层。 保持层被构造成保持在凹槽通道结构中发生的接缝的移动。

公开(公告)号：US20080023753A1

公开(公告)日：2008-01-31

申请号：US11618773

申请日：2006-12-30

申请人： Shin Gyu Choi ,  Seung Chul Oh

发明人： Shin Gyu Choi ,  Seung Chul Oh

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L21/823487 ,  H01L21/823412 ,  H01L21/823437 ,  H01L29/66621

摘要： A semiconductor device includes a device isolation structure, a recess channel structure, and a gate electrode. The device isolation structure is formed in a semiconductor substrate to define an active region. The recess channel structure is disposed in the semiconductor substrate under the active region. The gate electrode includes a holding layer disposed in a gate region to fill the recess channel structure. The holding layer prevents a seam and a shift of the seam occurring in the recess channel structure.

摘要翻译： 半导体器件包括器件隔离结构，凹槽通道结构和栅电极。 器件隔离结构形成在半导体衬底中以限定有源区。 凹陷沟道结构在有源区域下方设置在半导体衬底中。 栅极电极包括设置在栅极区域中以填充凹陷沟道结构的保持层。 保持层防止在凹槽通道结构中发生接缝和接缝的移动。

公开(公告)号：US07883965B2

公开(公告)日：2011-02-08

申请号：US11618773

申请日：2006-12-30

申请人： Shin Gyu Choi ,  Seung Chul Oh

发明人： Shin Gyu Choi ,  Seung Chul Oh

IPC分类号： H01L21/336

CPC分类号： H01L21/823487 ,  H01L21/823412 ,  H01L21/823437 ,  H01L29/66621

摘要： A semiconductor device includes a device isolation structure, a recess channel structure, and a gate electrode. The device isolation structure is formed in a semiconductor substrate to define an active region. The recess channel structure is disposed in the semiconductor substrate under the active region. The gate electrode includes a holding layer disposed in a gate region to fill the recess channel structure. The holding layer prevents a seam and a shift of the seam occurring in the recess channel structure.

摘要翻译： 半导体器件包括器件隔离结构，凹槽通道结构和栅电极。 器件隔离结构形成在半导体衬底中以限定有源区。 凹陷沟道结构在有源区域下方设置在半导体衬底中。 栅极电极包括设置在栅极区域中以填充凹陷沟道结构的保持层。 保持层防止在凹槽通道结构中发生接缝和接缝的移动。

公开(公告)号：US20050073156A1

公开(公告)日：2005-04-07

申请号：US10939031

申请日：2004-09-10

申请人： Seung Chul Oh

发明人： Seung Chul Oh

IPC分类号： E05B77/36 ,  B60J5/00 ,  E05B17/00 ,  E05B77/38 ,  E05B85/24 ,  E05C3/06

CPC分类号： E05B85/02 ,  E05B77/38 ,  E05B85/26 ,  Y10T292/1047

摘要： A door latch structure that eliminates the return noise occurring as the fork lever is rotated excessively by impact and inertia of the fork lever and returns colliding against the ratchet lever when the door is closed. The structure also restrains the noise generated as the door opens by itself due to the force of the restitution of the weather strip when the locked door latch is released.

摘要翻译： 一种门闩结构，其消除当叉杆被叉杆的冲击和惯性过度旋转时产生的返回噪声，并且当门关闭时返回与棘轮杆碰撞。 当锁定的门锁被释放时，结构还限制由于门打开的噪音，由于天气条的恢复力而产生的噪音。