公开(公告)号：US5943437A

公开(公告)日：1999-08-24

申请号：US725950

申请日：1996-10-07

申请人： Shingo Sumie ,  Tsutomu Morimoto ,  Yuichiro Gotoh ,  Eiji Takahashi ,  Shouji Kanbe ,  Akira Okamoto

发明人： Shingo Sumie ,  Tsutomu Morimoto ,  Yuichiro Gotoh ,  Eiji Takahashi ,  Shouji Kanbe ,  Akira Okamoto

IPC分类号： G06T7/00 ,  H01L21/66 ,  G06K9/00

CPC分类号： H01L22/20 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01L22/12

摘要： A surface image of a semiconductor wafer having a defect is picked up as a inspection image while a surface image of a semiconductor wafer having no defect is stored in an image memory as a reference image. A density difference image between the inspection image and the reference image. By extracting the defect in wiring and non-wiring regions from the density difference image, extract images are obtained. Two luminance information for wiring and non-wiring regions are obtained from extract images. Based on the luminance information, the type of the defect is determined and a production process where the defect has occurred is detect.

摘要翻译： 拾取具有缺陷的半导体晶片的表面图像作为检查图像，同时将没有缺陷的半导体晶片的表面图像作为参考图像存储在图像存储器中。 检查图像与参考图像之间的浓度差图像。 通过从密度差图像中提取布线和非布线区域中的缺陷，获得提取图像。 从提取图像获得布线和非布线区域的两个亮度信息。 基于亮度信息，确定缺陷的类型并检测发生缺陷的生产过程。