公开(公告)号：US20130001766A1

公开(公告)日：2013-01-03

申请号：US13422470

申请日：2012-03-16

申请人： Shinya TAKYU ,  Noriko Shimizu ,  Tsutomu Fujita

发明人： Shinya TAKYU ,  Noriko Shimizu ,  Tsutomu Fujita

IPC分类号： H01L23/48 ,  B24D3/00 ,  H01L21/02 ,  B24B1/00

CPC分类号： H01L21/304 ,  B24B7/228 ,  H01L21/3043

摘要： According to one embodiment, a substrate processing method is disclosed. The above method includes: grinding an outer edge portion on a back surface of a semiconductor wafer with a semiconductor element formed on its front surface with a first grindstone or blade to thereby form an annular groove; grinding a projecting portion on an inner side of the groove with a second grindstone to thereby form a recessed portion integrally with the groove on the back surface of the semiconductor wafer; and grinding a bottom surface of the recessed portion including a ground surface made by the second grindstone with a third grindstone.

摘要翻译： 根据一个实施例，公开了一种基板处理方法。 上述方法包括：用第一磨石或刀片在其表面上形成半导体元件研磨半导体晶片的背面上的外边缘部分，从而形成环形槽; 用第二磨石研磨槽的内侧的突出部分，从而与半导体晶片的背面上的槽一体地形成凹部; 并且用第三磨石研磨包括由第二磨石制成的地面的凹部的底面。

公开(公告)号：US08790995B2

公开(公告)日：2014-07-29

申请号：US13422470

申请日：2012-03-16

申请人： Shinya Takyu ,  Noriko Shimizu ,  Tsutomu Fujita

发明人： Shinya Takyu ,  Noriko Shimizu ,  Tsutomu Fujita

IPC分类号： H01L21/301

CPC分类号： H01L21/304 ,  B24B7/228 ,  H01L21/3043

摘要： According to one embodiment, a substrate processing method is disclosed. The above method includes: grinding an outer edge portion on a back surface of a semiconductor wafer with a semiconductor element formed on its front surface with a first grindstone or blade to thereby form an annular groove; grinding a projecting portion on an inner side of the groove with a second grindstone to thereby form a recessed portion integrally with the groove on the back surface of the semiconductor wafer; and grinding a bottom surface of the recessed portion including a ground surface made by the second grindstone with a third grindstone.

摘要翻译： 根据一个实施例，公开了一种基板处理方法。 上述方法包括：用第一磨石或刀片在其表面上形成半导体元件研磨半导体晶片的背面上的外边缘部分，从而形成环形槽; 用第二磨石研磨槽的内侧的突出部分，从而与半导体晶片的背面上的槽一体地形成凹部; 并且用第三磨石研磨包括由第二磨石制成的地面的凹部的底面。

公开(公告)号：US07294558B2

公开(公告)日：2007-11-13

申请号：US11072331

申请日：2005-03-07

申请人： Noriko Shimizu ,  Shinya Takyu ,  Tetsuya Kurosawa

发明人： Noriko Shimizu ,  Shinya Takyu ,  Tetsuya Kurosawa

IPC分类号： H01L21/30 ,  B26B7/10 ,  B26F3/00

CPC分类号： B28D5/0011 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/304 ,  H01L21/78 ,  Y10T83/041 ,  Y10T225/30

摘要： A starting point for cleavage made up of at least one of a groove and a through hole is formed on a chip dividing line or a dicing line along the cleaved surface of a wafer. Liquid matter is injected into the starting point. Then, the liquid matter is changed by applying an external factor that changes the liquid matter physically. Making use of the change, the wafer is cleaved so as to divide the wafer into semiconductor chips.

摘要翻译： 沿着切割面的芯片分割线或切割线形成由凹槽和通孔中的至少一个构成的切割的起始点。 将液体物质注入起点。 然后，通过施加物理地改变液体物质的外部因素来改变液体物质。 利用该变化，晶片被切割以将晶片分成半导体芯片。

公开(公告)号：US20080299686A1

公开(公告)日：2008-12-04

申请号：US11871497

申请日：2007-10-12

申请人： Motoshige KOBAYASHI ,  Masanobu Echizenya ,  Shinya Takyu ,  Noriko Shimizu ,  Hideki Nozaki ,  Masanobu Tsuchitani

发明人： Motoshige KOBAYASHI ,  Masanobu Echizenya ,  Shinya Takyu ,  Noriko Shimizu ,  Hideki Nozaki ,  Masanobu Tsuchitani

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  H01L21/30604 ,  H01L21/3065 ,  H01L22/20 ,  H01L29/66348

摘要： A method for manufacturing a semiconductor device, includes; measuring a within-wafer distribution of a physical quantity; and etching the wafer so that the physical quantity get close to constant within the wafer. Alternatively, a method for manufacturing a semiconductor device, includes, measuring a within-wafer distribution of a physical quantity of at least one of a plurality of semiconductor layers provided in a wafer; determining a within-wafer distribution of etching amount for the at least one of the plurality of semiconductor layers based on the measured within-wafer distribution of the physical quantity; and etching the at least one of the plurality of semiconductor layers based on the determined within-wafer distribution of the etching amount so that the etching amount is locally varied within the wafer.

摘要翻译： 一种半导体器件的制造方法，包括： 测量物理量的晶片内分布; 并蚀刻晶片，使得物理量在晶片内接近恒定。 或者，制造半导体器件的方法包括：测量设置在晶片中的多个半导体层中的至少一个的物理量的晶片内分布; 基于所测量的所述物理量的晶片内分布，确定所述多个半导体层中的所述至少一个的蚀刻量的晶片内分布; 并且基于确定的蚀刻量的晶片内分布来蚀刻多个半导体层中的至少一个，使得蚀刻量在晶片内局部变化。

公开(公告)号：US20050196899A1

公开(公告)日：2005-09-08

申请号：US11072331

申请日：2005-03-07

申请人： Noriko Shimizu ,  Shinya Takyu ,  Tetsuya Kurosawa

发明人： Noriko Shimizu ,  Shinya Takyu ,  Tetsuya Kurosawa

IPC分类号： H01L21/301 ,  B28D5/00 ,  H01L21/78

CPC分类号： B28D5/0011 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/304 ,  H01L21/78 ,  Y10T83/041 ,  Y10T225/30

摘要： A starting point for cleavage made up of at least one of a groove and a through hole is formed on a chip dividing line or a dicing line along the cleaved surface of a wafer. Liquid matter is injected into the starting point. Then, the liquid matter is changed by applying an external factor that changes the liquid matter physically. Making use of the change, the wafer is cleaved so as to divide the wafer into semiconductor chips.

摘要翻译： 沿着切割面的芯片分割线或切割线形成由凹槽和通孔中的至少一个构成的切割的起始点。 将液体物质注入起点。 然后，通过施加物理地改变液体物质的外部因素来改变液体物质。 利用该变化，晶片被切割以将晶片分成半导体芯片。

公开(公告)号：US20050020658A1

公开(公告)日：2005-01-27

申请号：US10683623

申请日：2003-10-10

申请人： Katsuyuki Inoo ,  Ken-Ichi Hattori ,  Noriko Shimizu

发明人： Katsuyuki Inoo ,  Ken-Ichi Hattori ,  Noriko Shimizu

IPC分类号： A61K9/70 ,  A61K31/415 ,  A61K31/42 ,  A61K31/18

CPC分类号： A61K9/7053 ,  A61K9/7061 ,  A61K9/7076 ,  A61K31/415 ,  A61K31/42

摘要： A pharmaceutical composition for application to an area of skin of a subject for local and/or systemic treatment of a COX-2 mediated disorder comprises a backing sheet that is flexibly conformable to the area of skin, the backing sheet having opposing surfaces that are respectively distal and proximal to the skin when applied; and a coating on the proximal surface of the backing sheet that comprises (a) an adhesive, (b) an active agent comprising a selective COX-2 inhibitory sulfonamide drug of low water solubility, and (c) a solvent system for the active agent, wherein the active agent is in a therapeutically effective total amount and the solvent system is selected with regard to composition and amount thereof to be effective to maintain the active agent substantially completely in solubilized form. A method of local treatment of a site of pain and/or inflammation in a subject comprises applying the composition to a skin surface of the subject, preferably at a locus overlying or adjacent to the site of pain and/or inflammation, and leaving the composition in place for a time period effective to permit delivery of a locally therapeutic amount of the active agent. A method of systemic treatment of a subject having a COX-2 mediated disorder comprises applying the composition to a skin surface of the subject, and leaving the composition in place for a time period effective to permit transdermal delivery of a therapeutic amount of the active agent.

摘要翻译： 用于局部和/或全身治疗COX-2介导的病症的受试者皮肤区域的药物组合物包括柔性地适应皮肤区域的背衬片，背衬片分别具有相对的表面 应用时远端和皮肤近端; 和背衬片的近侧表面上的涂层，其包含（a）粘合剂，（b）包含低水溶性的选择性COX-2抑制性磺酰胺药物的活性剂，和（c）活性剂的溶剂体系 其中活性剂处于治疗有效的总量，并且关于其组成和量的选择溶剂体系以有效地维持活性剂基本上完全为溶解形式。 局部治疗受试者的疼痛和/或炎症部位的方法包括将组合物施用于受试者的皮肤表面，优选在位于疼痛和/或炎症部位的上方或邻近的部位，并使组合物 在一段时间内有效地允许递送局部治疗量的活性剂。 具有COX-2介导的病症的受试者的全身治疗的方法包括将组合物施用于受试者的皮肤表面，并将组合物置于适当的时间段，以有效地允许经皮递送治疗量的活性剂 。

公开(公告)号：US5760273A

公开(公告)日：1998-06-02

申请号：US733871

申请日：1996-10-18

申请人： Masashi Inaba ,  Katsuaki Hasegawa ,  Noriko Shimizu ,  Yuji Ohgomori ,  Masayuki Honda ,  Takamichi Suzuki

发明人： Masashi Inaba ,  Katsuaki Hasegawa ,  Noriko Shimizu ,  Yuji Ohgomori ,  Masayuki Honda ,  Takamichi Suzuki

IPC分类号： C07C68/06 ,  C07C69/96

CPC分类号： C07C68/06 ,  Y02P20/582

摘要： A process for producing an unsymmetrical chain carbonic acid ester is described, which comprises reacting a first symmetrical chain carbonic acid ester with a second symmetrical chain carbonic acid ester or a monohydric alcohol in the presence of a catalyst comprising as an active catalyst component an oxide of at least one element selected from the Group IIIB elements of the periodic table.

摘要翻译： 描述了一种制备不对称链状碳酸酯的方法，其包括使第一对称链碳酸酯与第二对称链碳酸酯或一元醇在催化剂存在下反应，所述催化剂包含作为活性催化剂组分的氧化物 选自周期表的IIIB族元素中的至少一种元素。