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公开(公告)号：US08916917B2
公开(公告)日：2014-12-23
申请号：US13365627
申请日：2012-02-03
IPC分类号： H01L31/101 , H01L27/146
CPC分类号： H01L27/14641 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/1464
摘要： According to one embodiment, a solid-state imaging device includes a first element formation region surrounded by an element isolation region in a semiconductor substrate having a first and a second surface, an upper element isolation layer on the first surface in the element formation region, a lower element isolation layer between the second surface and the upper element isolation layer, a first photodiode in the element formation region, a floating diffusion in the element formation region, and a first transistor disposed between the first photodiode and the floating diffusion. A side surface of the lower element isolation layer protrudes closer to the transistor than a side surface of the upper element isolation layer.
摘要翻译： 根据一个实施例，固态成像装置包括由具有第一和第二表面的半导体衬底中的元件隔离区围绕的第一元件形成区域，元件形成区域中的第一表面上的上部元件隔离层， 在第二表面和上部元件隔离层之间的下部元件隔离层，元件形成区域中的第一光电二极管，元件形成区域中的浮动扩散以及设置在第一光电二极管和浮动扩散部之间的第一晶体管。 下部元件隔离层的侧表面比上部元件隔离层的侧表面更靠近晶体管。
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公开(公告)号：US08878265B2
公开(公告)日：2014-11-04
申请号：US13365627
申请日：2012-02-03
IPC分类号： H01L31/101 , H01L27/146
摘要： According to one embodiment, a solid-state imaging device includes a first element formation region surrounded by an element isolation region in a semiconductor substrate having a first and a second surface, an upper element isolation layer on the first surface in the element formation region, a lower element isolation layer between the second surface and the upper element isolation layer, a first photodiode in the element formation region, a floating diffusion in the element formation region, and a first transistor disposed between the first photodiode and the floating diffusion. A side surface of the lower element isolation layer protrudes closer to the transistor than a side surface of the upper element isolation layer.
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