Memory erase and memory read-out in an EL display panel controlled by an
electron beam
    1.
    发明授权
    Memory erase and memory read-out in an EL display panel controlled by an electron beam 失效
    在由电子束控制的EL显示面板中的存储器擦除和存储器读出

    公开(公告)号:US4207617A

    公开(公告)日:1980-06-10

    申请号:US919960

    申请日:1978-06-28

    IPC分类号: H01J31/12 G11C11/42 G11C13/04

    CPC分类号: H01J31/122

    摘要: An EL display panel comprising an electroluminescent element made of, for example, a ZnS:Mn layer sandwiched between a pair of dielectric layers exhibits hysteresis properties within light intensity versus applied voltage characteristics. A front electrode is formed on one of the dielectric layers, and a rear electrode is formed on the other dielectric layer in order to apply a sustaining voltage signal across the electroluminescent element for maintaining the memoried display information. An electron beam is applied to a desired position on the EL display panel through the rear electrode at a time when the sustaining voltage signal bears the zero level in order to erase the memoried information. The memoried display information is electrically read out by detecting a polarization relaxation current which flows through a memoried display position when an electron beam is applied thereto.

    摘要翻译: 包括由例​​如夹在一对电介质层之间的ZnS:Mn层构成的电致发光元件的EL显示面板在光强度与施加的电压特性之间显示滞后特性。 前电极形成在一个电介质层上,并且在另一个电介质层上形成一个后电极,以便在电致发光元件上施加维持电压信号以保持记忆显示信息。 当维持电压信号为零电平时,电子束通过后电极施加到EL显示面板上的期望位置,以便擦除存储的信息。 当向其施加电子束时,通过检测流过存储显示位置的偏振弛豫电流来电读出存储的显示信息。