公开(公告)号：US07132334B2

公开(公告)日：2006-11-07

申请号：US10668906

申请日：2003-09-23

申请人： Shun Li Lin

发明人： Shun Li Lin

IPC分类号： H01L21/8234

CPC分类号： H01L27/1122 ,  H01L27/112

摘要： A method of code programming a mask read only memory (ROM) is disclosed. A method of the present invention includes forming a layer of developable anti-reflective coating over a plurality of code openings located on a substrate of a ROM device. The plurality of code openings are typically elements of a first code, or pre-code, pattern, and a portion of the developable anti-reflective coating layer is removed or processed to define a second code, or real-code, pattern of the device. The method may be practiced by applying and patterning a layer of photoresist material over the developable anti-reflective coating to form a second code pattern, and then removing portions of the developable anti-reflective coating that remain exposed beneath the patterned photoresist material.

摘要翻译： 公开了一种代码编程掩模只读存储器（ROM）的方法。 本发明的方法包括在位于ROM器件的衬底上的多个代码开口上形成可显影的抗反射涂层层。 多个代码开口通常是第一代码或预代码图案的元件，并且可显影抗反射涂层的一部分被去除或处理以限定该器件的第二代码或实际代码图案 。 该方法可以通过在可显影的抗反射涂层上施加和图案化光致抗蚀剂材料层以形成第二代码图案，然后去除保留在图案化的光致抗蚀剂材料下方的可显影的抗反射涂层的部分来实施。

公开(公告)号：US06348384B1

公开(公告)日：2002-02-19

申请号：US09899141

申请日：2001-07-06

申请人： Shun Li Lin

发明人： Shun Li Lin

IPC分类号： H01L21336

CPC分类号： H01L29/6659 ,  H01L21/2652

摘要： The present invention provides a method of using organic polymer as a covering layer for a device lightly doped drain (LDD) structure, wherein a photo resist is covered by organic polymer, and ion implantation of different energies and kinds are performed to the same region of different line widths, thereby achieving the effect of LDD. Additionally, the covering layer of organic polymer is removed by means of simple and easy oxygen plasma etch so as not to increase the complexity of fabrication process. The complex fabrication process of a device LDD structure in the prior art is thus greatly improved.

摘要翻译： 本发明提供一种使用有机聚合物作为轻掺杂漏极（LDD）器件的覆盖层的方法，其中光致抗蚀剂被有机聚合物覆盖，并且将不同能量和种类的离子注入执行到 不同的线宽，从而达到LDD的效果。 此外，通过简单且容易的氧等离子体蚀刻来去除有机聚合物的覆盖层，从而不增加制造工艺的复杂性。 因此，现有技术中的器件LDD结构的复杂制造工艺大大改进。