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79 条记录 (耗时 0.024 秒)

    Charging device
    1.
    再颁专利
    Charging device 失效
    充电装置

    公开(公告)号：USRE35581E

    公开(公告)日：1997-08-12

    申请号：US562788

    申请日：1995-11-27

    申请人： Shunji Nakamura ,  Hiromitsu Hirabayashi ,  Junji Araya ,  Noribumi Koitabashi

    发明人： Shunji Nakamura ,  Hiromitsu Hirabayashi ,  Junji Araya ,  Noribumi Koitabashi

    IPC分类号： G03G15/02

    CPC分类号： G03G15/0216

    摘要： A charging device for contact-charging a member to be charged. A charging device for charging a movable member to be charged includes a contacting member adapted to contacting the member to be charged, and means for forming a vibratory electric field between the member to be charged and the contacting member, the vibratory electric field forming means applying between the members a vibratory voltage having a peak-to-peak value not less than twice an absolute value of a charge starting voltage to the member to be charged. The member to be charged can be uniformly charged.

    摘要翻译： 一种充电装置，用于对要充电的构件进行接触充电。 用于对要充电的可动构件进行充电的充电装置包括适于使待充电构件接触的接触构件和用于在待充电构件与接触构件之间形成振动电场的装置，所述振动电场形成装置施加 在所述构件之间具有不小于充电构件的充电起始电压的绝对值的两倍的峰 - 峰值的振动电压。 要充电的会员可以均匀充电。

    Charging device
    2.
    发明授权
    Charging device 失效
    充电装置

    公开(公告)号：US4851960A

    公开(公告)日：1989-07-25

    申请号：US131585

    申请日：1987-12-11

    申请人： Shunji Nakamura ,  Hiromitsu Hirabayashi ,  Junji Araya ,  Noribumi Koitabashi

    发明人： Shunji Nakamura ,  Hiromitsu Hirabayashi ,  Junji Araya ,  Noribumi Koitabashi

    IPC分类号： G03G15/02

    CPC分类号： G03G15/0216

    摘要： A charging device for contact-charging a member to be charged. A charging device for charging a movable member to be charged includes a contacting member adapted to contacting the member to be charged, and means for forming a vibratory electric field between the member to be charged and the contacting member, the vibratory electric field forming means applying between the members a vibratory voltage having a peak-to-peak value not less than twice an absolute value of charge starting voltage to the member to be charged. The member to be charged can be uniformly charged.

    Image forming apparatus with cleaning mechanism for charging electrode
    6.
    发明授权
    Image forming apparatus with cleaning mechanism for charging electrode 失效
    用于充电电极的清洁机构的图像形成装置

    公开(公告)号：US5132738A

    公开(公告)日：1992-07-21

    申请号：US789547

    申请日：1991-11-08

    申请人： Shunji Nakamura ,  Hiroki Kisu ,  Yohji Tomoyuki ,  Masanobu Saito ,  Junji Araya ,  Toshio Miyamoto

    发明人： Shunji Nakamura ,  Hiroki Kisu ,  Yohji Tomoyuki ,  Masanobu Saito ,  Junji Araya ,  Toshio Miyamoto

    IPC分类号： G03G15/02 ,  G03G15/16

    CPC分类号： G03G15/1675 ,  G03G15/0225 ,  G03G2215/021

    摘要： An image forming apparatus includes a movable image bearing member, a charger for electrically charging the image bearing member, latent image forming device for forming a latent image with use of the charger, a developing device for developing the latent image formed by the latent image forming device with toner electrically charged to a polarity the same as a polarity to which the image bearing member is charged by the charger, image transfer member contactable to a back side of a transfer material to transfer a toner image provided by the developing device from the image bearing member to the transfer material, a voltage application device for applying a voltage to the transfer member, the voltage application device applying a voltage having a polarity the same as that of the toner to the transfer member during non-transferring operation, and a device for providing different potentials for a portion of the image bearing member to be opposed to the image transfer device during the non-transfer action by said image transfer member and for a portion of said image bearing member to be opposed to said image transfer member during transfer action by the image transfer member.

    Semiconductor memory device and method for fabricating the same
    10.
    发明申请
    Semiconductor memory device and method for fabricating the same 审中-公开

    公开(公告)号：US20070176221A1

    公开(公告)日：2007-08-02

    申请号：US11710498

    申请日：2007-02-26

    申请人： Shunji Nakamura

    发明人： Shunji Nakamura

    IPC分类号： H01L29/94

    CPC分类号： H01L27/10873 ,  H01L21/84 ,  H01L27/108 ,  H01L27/1082 ,  H01L27/10844 ,  H01L27/1203 ,  H01L29/945

    摘要： A semiconductor memory device comprises a silicon layer having a first diffused region and a second diffused region formed therein, a gate electrode formed through an insulating film on one side of the silicon layer between the first and the second diffused regions, a capacitor formed on said one side of the silicon layer and having a storage electrode connected to the first diffused region, and a bit line formed on the other side of the silicon layer and connected to the second diffused region, whereby a semiconductor memory device of SOI structure can be easily fabricated. The bit line connected to the second diffused region is formed on the other side of the semiconductor layer, whereby the bit line can be arranged without restriction by the structure, etc. of the capacitor. Short circuit between the capacitor and the bit line can be prevented.