公开(公告)号：US08105947B2

公开(公告)日：2012-01-31

申请号：US12547232

申请日：2009-08-25

申请人： Shwang-Ming Jeng ,  Kin-Weng Wang ,  Hsin-Yi Tsai ,  Keng-Chu Lin ,  Chung-Chi Ko

发明人： Shwang-Ming Jeng ,  Kin-Weng Wang ,  Hsin-Yi Tsai ,  Keng-Chu Lin ,  Chung-Chi Ko

IPC分类号： H01L21/302 ,  H01L21/311 ,  H01L21/31

CPC分类号： H01L21/31144 ,  H01L21/76808 ,  H01L2221/1063

摘要： Methods for improving post etch in via or trench formation in semiconductor devices. A preferred embodiment comprises forming a re-capping layer over a dielectric film following an initial etch to form a feature in the dielectric film, followed by additional etch and etch back processing steps. The re-capping method provides protection for underlying films and prevents film damage post etch. Uniform feature profiles are maintained and critical dimension uniformity is obtained by use of the methods of the invention. The time dependent dielectric breakdown performance is increased.

摘要翻译： 用于改善半导体器件中的通孔或沟槽形成中的后蚀刻的方法。 优选实施例包括在初始蚀刻之后在电介质膜上形成覆盖层，以在电介质膜中形成特征，随后进行另外的蚀刻和回蚀处理步骤。 重新覆盖方法为底层膜提供保护，并防止蚀刻后的膜损伤。 通过使用本发明的方法维持均匀的特征轮廓并获得临界尺寸均匀性。 时间依赖介电击穿性能提高。

公开(公告)号：US20100120253A1

公开(公告)日：2010-05-13

申请号：US12547232

申请日：2009-08-25

申请人： Shwang-Ming Jeng ,  Kin-Weng Wang ,  Hsin-Yi Tsai ,  Keng-Chu Lin ,  Chung-Chi Ko

发明人： Shwang-Ming Jeng ,  Kin-Weng Wang ,  Hsin-Yi Tsai ,  Keng-Chu Lin ,  Chung-Chi Ko

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/76808 ,  H01L2221/1063

摘要： Methods for improving post etch in via or trench formation in semiconductor devices. A preferred embodiment comprises forming a re-capping layer over a dielectric film following an initial etch to form a feature in the dielectric film, followed by additional etch and etch back processing steps. The re-capping method provides protection for underlying films and prevents film damage post etch. Uniform feature profiles are maintained and critical dimension uniformity is obtained by use of the methods of the invention. The time dependent dielectric breakdown performance is increased.

摘要翻译： 用于改善半导体器件中的通孔或沟槽形成中的后蚀刻的方法。 优选实施例包括在初始蚀刻之后在电介质膜上形成覆盖层，以在电介质膜中形成特征，随后进行另外的蚀刻和回蚀处理步骤。 重新覆盖方法为底层膜提供保护，并防止蚀刻后的膜损伤。 通过使用本发明的方法维持均匀的特征轮廓并获得临界尺寸均匀性。 时间依赖介电击穿性能提高。