摘要:
A method and structure for removing side lobes is provided by positioning first and second radiation transparent regions of respective first and second phases at a first plane with the first and second phases being substantially out of phase. Further, positioning the first and the second region to cause radiation at a second plane to be neutralized in a first region, not to be neutralized in a second region, and to have a side lobe in a third region. Further, positioning a non-transparent region at the first plane to assure radiation at the second plane to be neutralized in the first region and positioning a third radiation transparent region of the first or second phase at the first plane to neutralize the side lobes in the third region at the second plane.
摘要:
A method for forming a contact hole unit cell is provided. A light transparent contact hole region of a first phase is positioned at a first plane. A light transparent phase-shifting region of a second phase is positioned at the first plane, the second phase being substantially out of phase with the first phase. The phase-shifting region substantially surrounds the contact hole region. A light transparent border region is positioned at the first plane outside the phase-shifting region. The border region has a phase substantially the same as that of the contact hole region. A chrome pad is positioned at the first plane outside and contacting at least a portion of the border region. The contact hole region, the phase-shifting region, the border region, and the chrome pad are positioned to cause light from the first plane to be reinforcing in a target contact hole configuration on a second plane and to be substantially neutralizing outside the target contact hole configuration on the second plane.
摘要:
A embodiment method for forming a layout for a phase shift mask. A embodiment comprises providing a layout comprising a first feature, a first shifter region and a second shifter region. The first feature preferably has a L-shape portion with an elbow region. The first shifter region is on the outside of the L-shaped portion and the second shifter region is on the inside of the L-shaped portion. The elbow region has an outside corner away from the second shifter region. We identify a phase conflict region caused by the L-shaped portion of the first feature, the first shifter region and the second shifter region. We resolve the phase conflict by modifying the elbow region by moving the outside corner of the elbow region away from the first shifter region and the phase conflict region. The modification of the elbow region further comprises forming a jog region in the line end section of the first feature.
摘要:
A phase shifting photolithography system includes inserting a phase shift component in a path of an illumination, wherein the phase shift component modifies a portion of the illumination to a different, and controlling an aperture shutter of the phase shift component modifying an interference of the illumination and the illumination with the different phase.
摘要:
A polarizing photolithography reticle system is provided including providing a reticle substrate, forming polarization structures on the reticle substrate, and etching circuit patterns on the reticle substrate on a side opposite the polarization structures.
摘要:
A phase shifting photolithography system includes inserting a phase shift component in a path of an illumination, wherein the phase shift component modifies a portion of the of the illumination to a different, and controlling an aperture shutter of the phase shift component modifying an interference of the illumination and the illumination with the different phase.
摘要:
A polarizing photolithography reticle system is provided including providing a reticle substrate, forming polarization structures on the reticle substrate, and etching circuit patterns on the reticle substrate on a side opposite the polarization structures.
摘要:
A semiconductor design is provided having at least one feature at one of a line end and a line junction, and phase regions. At least one cut line is added to at least one of such features at line ends and such features at line junctions. Phases are assigned to the phase regions. The manufacturing of a photomask with the assigned phase regions is directed.
摘要:
A method for fabricating a phase shift mask is provided. A trenched phase shift mask having portions of a light-blocking layer thereon is formed. A layer of anti-reflective material is then formed on the trenched phase shift mask and the portions of the light-blocking layer. The anti-reflective material is then removed on horizontal surfaces of the trenched phase shift mask and of the portions of the light-blocking layer.
摘要:
A semiconductor design is provided having at least one feature at one of a line end and a line junction, and phase regions. At least one cut line is added to at least one of such features at line ends and such features at line junctions. Phases are assigned to the phase regions. The manufacturing of a photomask with the assigned phase regions is directed.