Post-etch, printed circuit board cleaning process
    2.
    发明授权
    Post-etch, printed circuit board cleaning process 失效
    蚀刻后印刷电路板清洗工艺

    公开(公告)号:US5411595A

    公开(公告)日:1995-05-02

    申请号:US90892

    申请日:1993-07-13

    IPC分类号: C23G1/10 H05K3/22 B08B3/08

    摘要: A novel, environmentally innocuous, post-etch, pre-soldering cleaner and cleaning process is disclosed for removing contaminants from plated surfaces of printed circuit boards manufactured by the pattern plating method. The post-etch, cleaning process of this invention, for removing contaminants from plated surfaces of an etched printed circuit, comprises treating the plated surfaces with a cleaning solution which comprises an aqueous solution of (i) an imidazole-2-thione compound and (ii) an acid. The imidazole-2-thione compound has the formula: ##STR1## wherein A and B are the same or different --R--Y groups, wherein R is a linear, branched or cyclic alkenyl group containing 1 to 12 carbon atoms and Y is a hydrogen, halogen, cyano, vinyl, phenyl or ether moiety. Of this class of compounds, 1-methyl-3-propylimidazole-2-thione is preferred. The novel aqueous cleaners of this invention are effective replacements for conventional cleaners containing the toxic material thiourea and are superior to cleaners free of thiourea.

    摘要翻译: 公开了一种新颖的,环境无害的,后蚀刻的预焊接清洁剂和清洁方法,用于从通过图案电镀方法制造的印刷电路板的电镀表面去除污染物。 用于从蚀刻印刷电路的电镀表面去除污染物的本发明的后蚀刻,清洁方法包括用包含(i)咪唑-2-硫酮化合物和(i)的水溶液的清洗溶液处理电镀表面, ii)酸。 咪唑-2-硫酮化合物具有下式:其中A和B是相同或不同的-RY基团,其中R是含有1至12个碳原子的直链,支链或环状烯基,Y是氢, 卤素,氰基,乙烯基,苯基或醚部分。 在这类化合物中,优选1-甲基-3-丙基咪唑-2-硫酮。 本发明的新型含水清洁剂是含有有毒材料硫脲的常规清洁剂的有效替代物,并且优于不含硫脲的清洁剂。

    Method of controlling orthophosphite ion concentration in
hyphophosphite-based electroless plating baths
    3.
    发明授权
    Method of controlling orthophosphite ion concentration in hyphophosphite-based electroless plating baths 失效
    基于次磷酸盐的化学镀浴控制正磷酸根离子浓度的方法

    公开(公告)号:US5221328A

    公开(公告)日:1993-06-22

    申请号:US800596

    申请日:1991-11-27

    IPC分类号: C23C18/16 C23C18/36

    摘要: This invention relates to a method of controlling orthophosphite ion concentration in a hypophosphite-based electroless metal plating bath, comprising the steps of contacting the plating bath with a yttrium or a lanthanide series metal salt, and removing orthophosphite ions from the bath. The methods of the present invention provide effective means for controlling phosphite ion concentration in electroless metal plating baths and especially electroless nickel plating baths. The methods of the present invention provide means for increasing pH and removing orthophosphite ions from the plating bath.

    摘要翻译: 本发明涉及一种在次亚磷酸盐基化学镀金属浴中控制正磷酸根离子浓度的方法,包括以下步骤:使镀浴与钇或镧系金属盐接触,并从浴中除去正磷酸根离子。 本发明的方法提供了用于控制无电金属电镀浴中的亚磷酸根离子浓度,特别是化学镀镍浴的有效手段。 本发明的方法提供了用于提高pH和从电镀浴除去正磷酸根离子的方法。