公开(公告)号：US20220029619A1

公开(公告)日：2022-01-27

申请号：US17059113

申请日：2019-05-06

Applicant: Siemens Aktiengesellschaft

Inventor： Mark-Matthias Bakran ,  JÜRGEN BÖHMER ,  MARTIN HELSPER ,  EBERHARD ULRICH KRAFFT ,  BERND LASKA ,  ANDREAS NAGEL ,  STEFAN HANS WERNER SCHÖNEWOLF ,  JAN WEIGEL

IPC: H03K17/14 ,  H03K17/0814

Abstract: The invention relates to a method and an actuating arrangement for controlling a MOSFET, in particular wide-bandgap MOSFET. A change of an actuating variable, which actuates the MOSFET as a function of an operating characteristic variable that influences the switching behavior of the MOSFET is stored in a characteristic block. The change counteracts a reference actuating value of the actuating variable. An actual value of the operating characteristic variable is determined during operation of the MOSFET, The actuating variable is changed from the reference actuating value as a function of the actual value commensurate with the change of the actuating variable stored in the characteristic block. The change stored in the characteristic block can include a change in the switch-on or switch-off voltage or gate resistance of the MOSFET as a function of the operating temperature or the operating voltage of the MOSFET.

公开(公告)号：US20210211123A1

公开(公告)日：2021-07-08

申请号：US17059130

申请日：2019-05-15

Applicant: Siemens Aktiengesellschaft

Inventor： MARK-MATTHIAS BAKRAN ,  JÜRGEN BÖHMER ,  MARTIN HELSPER ,  EBERHARD ULRICH KRAFFT ,  BERND LASKA ,  ANDREAS NAGEL ,  STEFAN HANS WERNER SCHÖNEWOLF ,  JAN WEIGEL

IPC: H03K17/082 ,  H03K17/16 ,  H02M3/158 ,  H02M1/08

Abstract: With a method and an actuation arrangement for actuating a MOSFET, in particular a wide-bandgap semiconductor MOSFET, a monitoring process is performed to determine whether the body diode of the MOSFET is electrically conducting or blocking. If the body diode is electrically conducting, the MOSFET is activated, and if the body diode is electrically blocking, the MOSFET is actuated in response to an actuation signal generated based on the drain-source voltage and the direction and intensity of the drain-source current of the MOSFET.

公开(公告)号：US20220182050A2

公开(公告)日：2022-06-09

申请号：US17059113

申请日：2019-05-06

Applicant: Siemens Aktiengesellschaft

Inventor： MARK-MATTHIAS BAKRAN ,  JÜRGEN BÖHMER ,  MARTIN HELSPER ,  EBERHARD ULRICH KRAFFT ,  BERND LASKA ,  ANDREAS NAGEL ,  STEFAN HANS WERNER SCHÖNEWOLF ,  JAN WEIGEL

IPC: H03K17/14 ,  H03K17/0814

Abstract: The invention relates to a method and an actuation assembly (3) for actuating a MOSFET (1), in particular a MOSFET (1) based on a semiconductor with a wide band gap. According to the invention, a characteristic block is generated in which a change (ΔU1, ΔU2, ΔR1, ΔR2) in at least one actuation variable (U1, U2, R1, R2) for actuating the MOSFET (1) with respect to a reference actuation value of the actuation variable (U1, U2, R1, R2) is stored on the basis of at least one operating characteristic variable (U, T) which influences the switching behavior of the MOSFET (1), said change counteracting a change in the switching behavior as a result of the at least one operating characteristic variable (U, T). During the operation of the MOSFET (1), an actual value of the at least one operating characteristic variable (U, T) is ascertained, and the reference actuation value of the at least one actuation variable (U1, U2, R1, R2) is changed according to the characteristic block depending on the actual value of the at least one operating characteristic variable (U, T).

公开(公告)号：US20210297001A1

公开(公告)日：2021-09-23

申请号：US17261134

申请日：2019-07-22

Applicant: Siemens Aktiengesellschaft

Inventor： MARK-MATTHIAS BAKRAN ,  JÜRGEN BÖHMER ,  MARTIN HELSPER ,  EBERHARD ULRICH KRAFFT ,  BERND LASKA ,  ANDREAS NAGEL ,  STEFAN HANS WERNER SCHÖNEWOLF ,  JAN WEIGEL

IPC: H02M5/458 ,  B60L15/00

Abstract: A modular power converter with wide-bandgap semiconductors, in particular SiC semiconductors. The modular power converter has at least two base units. The base units are connected together on the input side, and each base unit has an input circuit on the input side and an output circuit on the output side. The input circuit and the output circuit are each formed by the wide-bandgap semiconductors arranged in a B6-bridge circuit. An intermediate circuit capacitor is connected in parallel with the input circuit and the output circuit forming an intermediate circuit. The input circuits of the base units or a sub-quantity of the base units are arranged in a series circuit. At least one inductor is arranged between each pair of input circuits.