公开(公告)号：US20040053434A1

公开(公告)日：2004-03-18

申请号：US09952626

申请日：2001-09-13

Applicant: Silicon Light Machines

Inventor： Mike Bruner

IPC: H01L021/00

CPC classification number: B81C1/00484 ,  B81B2201/0271 ,  B81B2203/0136 ,  B81C1/00246 ,  B81C1/00333 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2203/0136 ,  B81C2203/0735

Abstract: The current invention provides for encapsulated release structures, intermediates thereof and methods for their fabrication. The multi-layer structure has a capping layer, that preferably comprises silicon oxide and/or silicon nitride, and which is formed over an etch resistant substrate. A patterned device layer, preferably comprising silicon nitride, is embedded in a sacrificial material, preferably comprising polysilicon, and is disposed between the etch resistant substrate and the capping layer. Access trenches or holes are formed in to capping layer and the sacrificial material are selectively etched through the access trenches, such that portions of the device layer are release from sacrificial material. The etchant preferably comprises a noble gas fluoride NGF2x (wherein NgnullXe, Kr or Ar: and where xnull1, 2 or 3). After etching that sacrificial material, the access trenches are sealed to encapsulate released portions the device layer between the etch resistant substrate and the capping layer. The current invention is particularly useful for fabricating MEMS devices, multiple cavity devices and devices with multiple release features.

Abstract translation: 本发明提供了包封的释放结构，其中间体及其制备方法。 多层结构具有覆盖层，其优选地包括氧化硅和/或氮化硅，并且其形成在耐蚀刻衬底上。 优选地包括氮化硅的图案化器件层嵌入牺牲材料中，优选地包括多晶硅，并且设置在耐蚀刻衬底和覆盖层之间。 进入沟槽或孔形成在覆盖层中，并且牺牲材料通过进入沟槽被选择性地蚀刻，使得器件层的部分从牺牲材料释放。 蚀刻剂优选包含惰性气体氟化物NGF2x（其中Ng = Xe，Kr或Ar：其中x = 1,2或3）。 在蚀刻该牺牲材料之后，进入沟槽被密封以将器件层的释放部分封装在耐蚀刻衬底和覆盖层之间。 本发明对于制造具有多个释放特征的MEMS器件，多腔器件和器件特别有用。