公开(公告)号：US11315636B2

公开(公告)日：2022-04-26

申请号：US16784183

申请日：2020-02-06

Applicant: Silicon Storage Technology, Inc.

Inventor： Hsuan Liang ,  Man Tang Wu ,  Jeng-Wei Yang ,  Hieu Van Tran ,  Lihsin Chang ,  Nhan Do

IPC: G11C16/16 ,  G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  H01L27/11521

Abstract: A memory cell array with memory cells arranged in rows and columns, first sub source lines each connecting together the source regions in one of the rows and in a first plurality of the columns, second sub source lines each connecting together the source regions in one of the rows and in a second plurality of the columns, a first and second erase gate lines each connecting together all of the erase gates in the first and second plurality of the columns respectively, first select transistors each connected between one of first sub source lines and one of a plurality of source lines, second select transistors each connected between one of second sub source lines and one of the source lines, first select transistor line connected to gates of the first select transistors, and a second select transistor line connected to gates of the second select transistors.