公开(公告)号：US20190341110A1

公开(公告)日：2019-11-07

申请号：US16042972

申请日：2018-07-23

Applicant: Silicon Storage Technology, Inc.

Inventor： Hieu Van Tran ,  Thuan Vu ,  Staniey Hong ,  Anh Ly ,  Vlpln Tlwarl ,  Nhan Do

IPC: G11C16/04 ,  G06N3/08 ,  H01L29/788 ,  H01L27/11521

Abstract: Numerous embodiments are disclosed for a high voltage generation algorithm and system for generating high voltages necessary for a particular programming operation in analog neural memory used in a deep learning artificial neural network. Different calibration algorithms and systems are also disclosed. Optionally, compensation measures can be utilized that compensate for changes in voltage or current as the number of cells being programmed changes.