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公开(公告)号：US20190273054A1
公开(公告)日：2019-09-05
申请号：US16295727
申请日：2019-03-07
Applicant: Siliconware Precision Industries Co., Ltd.
Inventor： Yi-Hsin Chen , Chia-Hsin Wu , Po-Yi Wu
IPC: H01L23/00 , H01L23/498 , H01L21/48
Abstract: A substrate structure and a method for fabricating the same are provided. A barrier layer is formed on an entire top surface of a wiring layer of a substrate body to isolate the wiring layer from moisture and prevent the wiring layer from being oxidized. Therefore, the wiring layer is securely bonded to an insulation layer, thereby preventing the delamination or peeling problem from occurring.
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