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公开(公告)号：US08835298B2
公开(公告)日：2014-09-16
申请号：US13415492
申请日：2012-03-08
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L21/28518 , H01L22/12 , H01L22/20
摘要： The amount of Pt residues remaining after forming Pt-containing NiSi is reduced by performing a rework including applying SPM at a temperature of 130° C. in a SWC tool, if Pt residue is detected. Embodiments include depositing a layer of Ni/Pt on a semiconductor substrate, annealing the deposited Ni/Pt layer, removing unreacted Ni from the annealed Ni/Pt layer, annealing the Ni removed Ni/Pt layer, removing unreacted Pt from the annealed Ni removed Ni/Pt layer, analyzing the Pt removed Ni/Pt layer for unreacted Pt residue, and if unreacted Pt residue is detected, applying SPM to the Pt removed Ni/Pt layer in a SWC tool. The SPM may be applied to the Pt removed Ni′/Pt layer at a temperature of 130° C.
摘要翻译： 如果检测到Pt残留物，则通过执行包括在SWC工具中在130℃的温度下施加SPM的返工来减少形成含Pt的NiSi后剩余的Pt残余物的量。 实施例包括在半导体衬底上沉积一层Ni / Pt，退火沉积的Ni / Pt层，从退火的Ni / Pt层去除未反应的Ni，退火Ni去除的Ni / Pt层，从退火的Ni中除去未反应的Pt Ni / Pt层，分析未去除Pt残留物的Pt去除Ni / Pt层，如果检测到未反应的Pt残留物，则在SWC工具中将Pt施加到去除的Pt / Ni层上。 可以在130℃的温度下将SPM施加到Pt去除的Ni'/ Pt层上
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公开(公告)号：US20130234213A1
公开(公告)日：2013-09-12
申请号：US13415492
申请日：2012-03-08
CPC分类号： H01L21/28518 , H01L22/12 , H01L22/20
摘要： The amount of Pt residues remaining after forming Pt-containing NiSi is reduced by performing a rework including applying SPM at a temperature of 130° C. in a SWC tool, if Pt residue is detected. Embodiments include depositing a layer of Ni/Pt on a semiconductor substrate, annealing the deposited Ni/Pt layer, removing unreacted Ni from the annealed Ni/Pt layer, annealing the Ni removed Ni/Pt layer, removing unreacted Pt from the annealed Ni removed Ni/Pt layer, analyzing the Pt removed Ni/Pt layer for unreacted Pt residue, and if unreacted Pt residue is detected, applying SPM to the Pt removed Ni/Pt layer in a SWC tool. The SPM may be applied to the Pt removed Ni'/Pt layer at a temperature of 130° C.
摘要翻译： 如果检测到Pt残留物，则通过执行包括在SWC工具中在130℃的温度下施加SPM的返工来减少形成含Pt的NiSi后剩余的Pt残余物的量。 实施例包括在半导体衬底上沉积一层Ni / Pt，退火沉积的Ni / Pt层，从退火的Ni / Pt层去除未反应的Ni，退火Ni去除的Ni / Pt层，从退火的Ni中除去未反应的Pt Ni / Pt层，分析未去除Pt残留物的Pt去除Ni / Pt层，如果检测到未反应的Pt残留物，则在SWC工具中将Pt施加到去除的Pt / Ni层上。 可以在130℃的温度下将SPM施加到Pt去除的Ni'/ Pt层上
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3.发明授权公开(公告)号：US08835318B2
公开(公告)日：2014-09-16
申请号：US13414946
申请日：2012-03-08
申请人： Clemens Fitz , Jochen Poth , Kristin Schupke
发明人： Clemens Fitz , Jochen Poth , Kristin Schupke
IPC分类号： H01L21/283 , H01L23/532
CPC分类号： H01L21/02068 , H01L21/28518 , H01L21/76829 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： Ni and Pt residuals are eliminated by replacing an SPM cleaning process with application of HNO3 in an SWC tool. Embodiments include depositing a layer of Ni/Pt on a semiconductor substrate, annealing the deposited Ni/Pt layer, removing unreacted Ni from the annealed Ni/Pt layer by applying HNO3 to the annealed Ni/Pt layer in an SWC tool, annealing the Ni removed Ni/Pt layer, and removing unreacted Pt from the annealed Ni removed Ni/Pt layer. Embodiments include forming first and second gate electrodes on a substrate, spacers on opposite sides of each gate electrode, and Pt-containing NiSi on the substrate adjacent each spacer, etching back the spacers, forming a tensile strain layer over the first gate electrode, applying a first HNO3 in an SWC tool, forming a compressive strain layer over the second gate electrode, and applying a second HNO3 in an SWC tool.
摘要翻译： 通过在SWC工具中应用HNO3代替SPM清洗工艺，可以消除Ni和Pt残留物。 实施例包括在半导体衬底上沉积一层Ni / Pt，对沉积的Ni / Pt层进行退火，通过在SWC工具中对退火的Ni / Pt层施加HNO 3，从退火的Ni / Pt层去除未反应的Ni，退火Ni 去除Ni / Pt层，并从退火的Ni去除的Ni / Pt层去除未反应的Pt。 实施例包括在基板上形成第一和第二栅极电极，在每个栅电极的相对侧上形成间隔物，并在邻近每个间隔物的衬底上形成含Pt的NiSi，蚀刻间隔物，在第一栅电极上形成拉伸应变层， 在SWC工具中的第一HNO 3，在第二栅电极上形成压应变层，并在SWC工具中施加第二HNO 3。
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4.发明申请HNO3 SINGLE WAFER CLEAN PROCESS TO STRIP NICKEL AND FOR MOL POST ETCH 有权HNO3单辊清洗工艺，用于粘合镍和MOL POST ETCH公开(公告)号：US20130234335A1
公开(公告)日：2013-09-12
申请号：US13414946
申请日：2012-03-08
申请人： Clemens Fitz , Jochen Poth , Kristin Schupke
发明人： Clemens Fitz , Jochen Poth , Kristin Schupke
IPC分类号： H01L23/532 , H01L21/283
CPC分类号： H01L21/02068 , H01L21/28518 , H01L21/76829 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： Ni and Pt residuals are eliminated by replacing an SPM cleaning process with application of HNO3 in an SWC tool. Embodiments include depositing a layer of Ni/Pt on a semiconductor substrate, annealing the deposited Ni/Pt layer, removing unreacted Ni from the annealed Ni/Pt layer by applying HNO3 to the annealed Ni/Pt layer in an SWC tool, annealing the Ni removed Ni/Pt layer, and removing unreacted Pt from the annealed Ni removed Ni/Pt layer. Embodiments include forming first and second gate electrodes on a substrate, spacers on opposite sides of each gate electrode, and Pt-containing NiSi on the substrate adjacent each spacer, etching back the spacers, forming a tensile strain layer over the first gate electrode, applying a first HNO3 in an SWC tool, forming a compressive strain layer over the second gate electrode, and applying a second HNO3 in an SWC tool.
摘要翻译： 通过在SWC工具中应用HNO3代替SPM清洗工艺，可以消除Ni和Pt残留物。 实施例包括在半导体衬底上沉积一层Ni / Pt，对沉积的Ni / Pt层进行退火，通过在SWC工具中对退火的Ni / Pt层施加HNO 3，从退火的Ni / Pt层去除未反应的Ni，退火Ni 去除Ni / Pt层，并从退火的Ni去除的Ni / Pt层去除未反应的Pt。 实施例包括在基板上形成第一和第二栅极电极，在每个栅电极的相对侧上形成间隔物，并在邻近每个间隔物的衬底上形成含Pt的NiSi，蚀刻间隔物，在第一栅电极上形成拉伸应变层， 在SWC工具中的第一HNO 3，在第二栅电极上形成压应变层，并在SWC工具中施加第二HNO 3。
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