公开(公告)号：US20230230874A1

公开(公告)日：2023-07-20

申请号：US18007145

申请日：2021-06-23

Applicant: Soitec

Inventor： Bruno Clemenceau ,  Ludovic Ecarnot ,  Aymen Ghorbel ,  Marcel Broekaart ,  Daniel Delprat ,  Séverin Rouchier ,  Stephane Thieffry ,  Carine Duret

IPC: H01L21/762 ,  H01L21/683 ,  H01L21/02

CPC classification number: H01L21/76254 ,  H01L21/6835 ,  H01L21/02274

Abstract: A method for transferring a thin layer onto a carrier substrate comprises preparing a carrier substrate using a preparation method involving supplying a base substrate having, on a main face, a charge-trapping layer and forming a dielectric layer having a thickness greater than 200 nm on the charge-trapping layer. Once the dielectric layer is formed, the ionized deposition and sputtering of the dielectric layer are simultaneously performed. The transfer method also comprises assembling, by way of molecular adhesion and with an unpolished free face of the dielectric layer, a donor substrate to the dielectric layer of the carrier substrate, the donor substrate having an embrittlement plane defining the thin layer. Finally, the method comprises splitting the donor substrate at the embrittlement plane to release the thin layer and to transfer it onto the carrier substrate.