公开(公告)号：US06664026B2

公开(公告)日：2003-12-16

申请号：US09815540

申请日：2001-03-22

申请人： Son Van Nguyen ,  Neil Leslie Robertson ,  Thomas Edward Dinan ,  Thao Duc Pham

发明人： Son Van Nguyen ,  Neil Leslie Robertson ,  Thomas Edward Dinan ,  Thao Duc Pham

IPC分类号： G03F700

CPC分类号： G03F7/094 ,  G03F7/40 ,  G11B5/17 ,  G11B5/3116 ,  G11B5/3163 ,  H01L21/0332 ,  H01L21/042

摘要： An etch barrier to be used in a photolithograph process is disclosed. A silicon rich etch barrier is deposited on a substrate using a low energy deposition technique. A diamond like carbon layer is deposited on the silicon rich etch barrier. Photoresist is then placed on this etch barrier DLC combination. To form photolithographic features, successive steps of oxygen and flourine reactive ion etching is used.