公开(公告)号：US20040251395A1

公开(公告)日：2004-12-16

申请号：US10863654

申请日：2004-06-08

申请人： Sony Corporation

发明人： Shingo Takahashi ,  Yoshiyuki Enomoto ,  Hideshi Abe

IPC分类号： H01L027/00 ,  H01L031/00

CPC分类号： H01L27/14629 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14656

摘要： A solid-state image pickup device 100 is constructed in which a waveguide 15 is formed in an insulating layer on a light-receiving sensor portion 2, a side wall 161 of the waveguide 15 is covered with a reflective film 17 made of an Al film deposited by a CVD method, an underlayer film 19 is formed between the reflective film 17 and the side wall 161 of the waveguide 15 and the underlayer film 19 is made of a VIa-group element. It is possible to obtain a solid-state image pickup device including a waveguide in which hydrogen supplied to the light-receiving sensor portion 2 can be restrained from being absorbed by the underlayer film 19 and which has the reflective film 17 of high reflectivity with satisfactory surface condition, satisfactory coverage and excellent adhesion.

摘要翻译： 构成了在光接收传感器部分2上的绝缘层中形成波导15的固态图像拾取装置100，波导15的侧壁161被由Al膜制成的反射膜17覆盖 通过CVD法沉积，在反射膜17和波导15的侧壁161之间形成下层膜19，下层膜19由VIa族元件构成。 可以获得包括波导的固态图像拾取装置，其中可以抑制供应到光接收传感器部分2的氢被下层膜19吸收，并且反射率高的反射膜17具有令人满意的 表面状况好，覆盖性好，附着力好。