公开(公告)号：US20150008427A1

公开(公告)日：2015-01-08

申请号：US14312126

申请日：2014-06-23

Applicant: Sony Corporation

Inventor： Yasuhiro TERAI ,  Naobumi TOYOMURA

IPC: H01L49/02 ,  H01L27/12

CPC classification number: H01L28/60 ,  H01L27/1225 ,  H01L27/1255

Abstract: A semiconductor device includes: a capacitor including a first insulating film between a lower electrode and an upper electrode; and a first laminated structure including a second insulating film and a semiconductor film, the second insulating film and the semiconductor film being located between part or all of a rim of the lower electrode and the first insulating film.

Abstract translation: 半导体器件包括：电容器，包括在下电极和上电极之间的第一绝缘膜; 以及包括第二绝缘膜和半导体膜的第一层压结构，所述第二绝缘膜和所述半导体膜位于所述下电极和所述第一绝缘膜的边缘的一部分或全部之间。

公开(公告)号：US20140291639A1

公开(公告)日：2014-10-02

申请号：US14202852

申请日：2014-03-10

Applicant: Sony Corporation

Inventor： Yasuhiro TERAI ,  Takahide ISHII ,  Ayumu SATO

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3244 ,  H01L27/3262 ,  H01L27/3265

Abstract: Provided is a semiconductor device that includes: a transistor; an oxide semiconductor film; a first conductive film electrically connected to the oxide semiconductor film; and a first insulating film provided between the first conductive film and the oxide semiconductor film.

Abstract translation: 提供一种半导体器件，其包括：晶体管; 氧化物半导体膜; 与氧化物半导体膜电连接的第一导电膜; 以及设置在第一导电膜和氧化物半导体膜之间的第一绝缘膜。