PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE

    公开(公告)号:US20230027447A1

    公开(公告)日:2023-01-26

    申请号:US17772019

    申请日:2020-10-15

    IPC分类号: H01L51/00

    摘要: A first photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is disposed to be opposed to the first electrode; and a photoelectric conversion layer that is provided between the first electrode and the second electrode. The photoelectric conversion layer includes a fullerene C60 or a fullerene C70 as a first organic semiconductor material and a second organic semiconductor material having an ionization potential of 0 or more and 5.0 eV or less.

    PHOTOELECTRIC CONVERTER AND IMAGING DEVICE
    2.
    发明公开

    公开(公告)号:US20230207598A1

    公开(公告)日:2023-06-29

    申请号:US17928862

    申请日:2021-05-28

    摘要: A photoelectric converter includes: a first electrode; a second electrode; a first photoelectric conversion layer; a second photoelectric conversion layer; a first buffer layer; and a second buffer layer. The second electrode is disposed to be opposed to the first electrode. The first photoelectric conversion layer is provided between the first electrode and the second electrode. The first photoelectric conversion layer includes a first dye material and a first carrier transport material. The second photoelectric conversion layer is stacked on the second electrode side of the first photoelectric conversion layer between the first electrode and the second electrode. The second photoelectric conversion layer includes a second dye material and a second carrier transport material. The second dye material has a light absorption waveform different from a light absorption waveform of the first dye material. The first buffer layer has a first electrical conduction type. The first buffer layer is provided between the first electrode and the first photoelectric conversion layer. The second buffer layer has a second electrical conduction type different from the first electrical conduction type. The second buffer layer is provided between the second electrode and the second photoelectric conversion layer.

    PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE

    公开(公告)号:US20230157040A1

    公开(公告)日:2023-05-18

    申请号:US18010732

    申请日:2021-06-10

    IPC分类号: H10K39/32

    CPC分类号: H10K39/32

    摘要: A photoelectric conversion element of an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode, the organic photoelectric conversion layer having, in the layer, a domain being larger than 1 nm and smaller than 10 nm and including one organic semiconductor material in a predetermined cross-section between the first electrode and the second electrode.

    IMAGING ELEMENT AND IMAGING DEVICE

    公开(公告)号:US20230101309A1

    公开(公告)日:2023-03-30

    申请号:US17794746

    申请日:2021-01-18

    摘要: An imaging element according to an embodiment of the present disclosure includes: a first electrode; a second electrode; an organic layer; a first semiconductor layer; and a second semiconductor layer. The second electrode is disposed to be opposed to the first electrode. The organic layer is provided between the first electrode and the second electrode. The organic layer includes at least a photoelectric conversion layer. The first semiconductor layer is provided between the second electrode and the organic layer. The first semiconductor layer includes at least one of a carbon-containing compound or an inorganic compound. The carbon-containing compound has a greater electron affinity than a work function of the first electrode. The inorganic compound has a greater work function than the work function of the first electrode. The second semiconductor layer is provided between the second electrode and the first semiconductor layer. The second semiconductor layer has an absolute value B of a difference between a HOMO (Highest Occupied Molecular Orbital) level and a Fermi level of the second electrode or has, near the Fermi level, an in-gap level having a state density of 1/10000 or more as compared with the HOMO level. The absolute value B is greater than or equal to an absolute value A of a difference between a first LUMO (Lowest Unoccupied Molecular Orbital) level and the Fermi level. The first LUMO level is calculated from an optical band gap.

    PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE

    公开(公告)号:US20220223802A1

    公开(公告)日:2022-07-14

    申请号:US17599389

    申请日:2020-03-04

    IPC分类号: H01L51/00

    摘要: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is opposed to the first electrode; and an organic photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes, as a first organic semiconductor material, a benzothienobenzothiophene-based compound represented by a general formula (1).