公开(公告)号：US12120893B2

公开(公告)日：2024-10-15

申请号：US17057460

申请日：2019-05-24

申请人： The University of North Carolina at Chapel Hill

发明人： Jinsong Huang ,  Zhenhua Yu

IPC分类号： H01L31/00 ,  H10K30/15 ,  H10K30/81 ,  H10K85/20

CPC分类号： H10K30/152 ,  H10K30/151 ,  H10K30/81 ,  H10K85/215

摘要： The present disclosure is directed to double junction tandem perovskite solar cells having a n+/n interconnection layer comprising an ion-doped fullerene layer and a metal oxide layer. In certain embodiments, the metal oxide is SnO2-x (0

公开(公告)号：US20240172550A1

公开(公告)日：2024-05-23

申请号：US18279323

申请日：2022-03-23

申请人： NISSAN CHEMICAL CORPORATION

发明人： Shun YAMAGUCHI ,  Shun SUGAWARA

IPC分类号： H10K85/10 ,  C08G61/12 ,  C08G65/48 ,  H10K30/81 ,  H10K50/15

CPC分类号： H10K85/113 ,  C08G61/126 ,  C08G65/485 ,  H10K30/81 ,  H10K50/15 ,  C08G2261/3223 ,  C08G2261/512 ,  C08G2261/91

摘要： Provided is a charge-transporting composition for formation of an electrical charge-transporting thin film for use in a photoelectric conversion element, together with a non-fullerene active layer. The charge-transporting composition comprises: a charge-transporting substance composed of a polythiophene derivative containing a repeating unit represented by formula (1); an electron-accepting dopant substance; and a solvent. The electron-accepting dopant substance includes at least one of an arylsulfonic acid represented by formula (2) and a heteropoly acid.




(R1 and R2 are, mutually independently, a hydrogen atom, an alkoxy group, —O—[Z—O]p—Re, a sulphonic acid group, etc. p is an integer of 1 or greater, and Re is a hydrogen atom or an alkyl group, etc. that may be substituted with a sulphonic acid group, or the like.)




(A is a naphthalene ring, etc.; B is a divalent through tetravalent perfluorobiphenyl group; l is an integer that satisfies 1≤l≥4; and q is an integer of 2-4.)

公开(公告)号：US20230363184A1

公开(公告)日：2023-11-09

申请号：US18015717

申请日：2021-07-09

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Miki KATAKURA

IPC分类号： H10K30/30 ,  H10K39/32 ,  H10K85/10 ,  H10K30/81 ,  H10K85/20

CPC分类号： H10K30/30 ,  H10K30/81 ,  H10K39/32 ,  H10K85/113 ,  H10K85/215

摘要： Deterioration of an external quantum efficiency due to a heat treatment is suppressed.
A photoelectric conversion element 10 includes an anode 12, a cathode 16, and an active layer 14 provided between the anode and the cathode, in which the active layer contains at least one p-type semiconductor material and at least two n-type semiconductor materials, the at least one p-type semiconductor material is a polymer compound having a structural unit represented by the following Formula (I):









in Formula (I), Ar1, Ar2, and Z are as defined in the specification, and

the at least two n-type semiconductor materials contain one or more non-fullerene compounds.

公开(公告)号：US11793009B2

公开(公告)日：2023-10-17

申请号：US17979904

申请日：2022-11-03

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Yukio Kaneda ,  Fumihiko Koga

IPC分类号： H10K39/32 ,  H04N23/84 ,  H04N25/00 ,  H04N25/79 ,  H10K30/81 ,  H01L27/146 ,  H10K19/00

CPC分类号： H10K39/32 ,  H04N23/84 ,  H04N25/00 ,  H04N25/79 ,  H10K30/81 ,  H01L27/14647 ,  H10K19/201

摘要： An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.

公开(公告)号：US20230309371A1

公开(公告)日：2023-09-28

申请号：US18020201

申请日：2021-08-06

申请人： ENI S.P.A.

发明人： Riccardo PO ,  Gianni CORSO ,  Riccardo BARBIERI

IPC分类号： H10K85/10 ,  H10K85/20 ,  H10K30/50 ,  H10K30/81

CPC分类号： H10K85/151 ,  H10K85/1135 ,  H10K85/111 ,  H10K85/113 ,  H10K85/215 ,  H10K30/50 ,  H10K30/81

摘要： An inverted polymer photovoltaic cell (or solar cell) includes an anode; a first anodic interlayer (buffer layer) based on PEDOT:PSS [poly(3,4-ethylenedioxythiophene):polystyrene sulfonate]; an active layer having at least one photoactive organic polymer as an electron donor and at least one electron acceptor organic compound; a cathodic interlayer (buffer layer); and a cathode. A second anodic interlayer (buffer layer) includes at least one heteropolyacid and, optionally, at least one amino compound is placed between the first anodic interlayer (buffer layer) and the active layer.
The inverted polymer photovoltaic cell (or solar cell) shows good values of photoelectric conversion efficiency (power conversion efficiency—PCE) (η) and, in particular, a good level of adhesion between the different layers, more specifically between the active layer and the first anodic interlayer (buffer layer).

公开(公告)号：US20230271848A1

公开(公告)日：2023-08-31

申请号：US18314772

申请日：2023-05-09

申请人： CubicPV Inc.

发明人： Michael David Irwin ,  Marissa Lynn Higgins ,  Nicholas Charles Anderson

IPC分类号： C01G33/00 ,  C01G35/00 ,  C07D221/18 ,  C07F7/08 ,  H10K30/35 ,  H10K30/81

CPC分类号： C01G33/00 ,  C01G35/00 ,  C07D221/18 ,  C07F7/0834 ,  H10K30/35 ,  H10K30/81 ,  B82Y30/00

摘要： A metal oxide nanoparticle comprises a metal oxide core of formula M2O5, wherein M is tantalum (V) or niobium (V) and alkylsiloxane ligands bonded to the metal oxide core.

公开(公告)号：US11737291B2

公开(公告)日：2023-08-22

申请号：US17471708

申请日：2021-09-10

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Tomoyasu Yokoyama ,  Yu Nishitani ,  Shohei Kusumoto ,  Yumi Miyamoto

IPC分类号： H10K30/10 ,  H10K30/81 ,  H10K102/00

CPC分类号： H10K30/10 ,  H10K30/81 ,  H10K2102/00

摘要： A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a first electron transport layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, the photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a Sn cation, and a halogen anion, and the first electron transport layer contains a niobium oxide halide.

公开(公告)号：US11706969B2

公开(公告)日：2023-07-18

申请号：US17318961

申请日：2021-05-12

申请人： OTI Lumionics Inc.

发明人： Yi-Lu Chang ,  Qi Wang ,  Michael Helander ,  Jacky Qiu ,  Zhibin Wang ,  Thomas Lever

IPC分类号： H01L51/00 ,  H10K71/00 ,  C09K11/06 ,  G02B1/18 ,  H10K30/82 ,  H10K50/814 ,  H10K50/824 ,  H10K50/828 ,  H10K59/12 ,  H10K71/16 ,  H10K30/81 ,  H10K50/82 ,  H10K50/822 ,  H10K59/35 ,  H10K85/30 ,  H10K102/00

CPC分类号： H10K71/621 ,  C09K11/06 ,  G02B1/18 ,  H10K30/82 ,  H10K50/814 ,  H10K50/824 ,  H10K50/828 ,  H10K59/12 ,  H10K71/166 ,  H10K30/81 ,  H10K50/82 ,  H10K50/822 ,  H10K59/352 ,  H10K59/353 ,  H10K85/324 ,  H10K2102/3026 ,  H10K2102/351

摘要： An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.

公开(公告)号：US11676771B2

公开(公告)日：2023-06-13

申请号：US17501034

申请日：2021-10-14

申请人： Research & Business Foundation Sungkyunkwan University

发明人： Hyun Suk Jung ,  Taekyu Ahn ,  Zhu Jun ,  Bonghyun Jo ,  Han Gill Sang ,  Dong Hoe Kim ,  Jidong Kim

IPC分类号： H01G9/20 ,  H01G9/00 ,  H10K30/81 ,  H10K30/30 ,  H10K30/40 ,  H10K71/12 ,  H10K30/82 ,  H10K71/15 ,  H01L51/44 ,  H01L51/42 ,  H01L51/00

CPC分类号： H01G9/2009 ,  H01G9/0036 ,  H01G9/2027 ,  H01G9/2031 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/4253 ,  H01L51/4293 ,  H01L51/441 ,  H01L51/442

摘要： A method for manufacturing a perovskite solar cell, includes disposing an electron transport layer on a transparent conductive substrate, disposing an additive-doped perovskite light absorption layer on the electron transport layer, disposing a hole transport layer on the additive-doped perovskite light absorption layer, and disposing an electrode on the hole transport layer. The disposing of the additive-doped perovskite light absorption layer includes adding an additive having hydrophobicity to a perovskite precursor solution, and applying the additive-added perovskite precursor solution onto the electron transport layer to form the additive-doped perovskite light absorption layer.

公开(公告)号：US20240349526A1

公开(公告)日：2024-10-17

申请号：US18755096

申请日：2024-06-26

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Masahiro JOEI ,  Kaori TAKIMOTO

IPC分类号： H10K39/32 ,  H01L27/146 ,  H10K30/81

CPC分类号： H10K39/32 ,  H01L27/14643 ,  H10K30/81

摘要： A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.