公开(公告)号：US20240334081A1

公开(公告)日：2024-10-03

申请号：US18578911

申请日：2022-03-16

申请人： Sony Semiconductor Solutions Corporation

发明人： Kazumasa Hirano ,  Kazuhiro Itani ,  Sumie Tanoue ,  Shigeru Kanematsu

IPC分类号： H04N25/62 ,  H04N25/77

CPC分类号： H04N25/62 ,  H04N25/77

摘要： Imaging elements and imaging devices that reduce leakage of electric charges in a photoelectric conversion unit are disclosed. In one example, an imaging element includes photoelectric conversion units for generating an image signal corresponding to incident light. A charge retaining unit receives and retains sequentially transferred electric charges from the photoelectric conversion units. Charge transfer units are disposed for each of the photoelectric conversion units and transfer the electric charges to the charge retaining unit. Charge transfer signal lines are capacitively coupled to the charge retaining unit and are respectively connected to the charge transfer units to transmit a control signal. The charge transfer signal line connected to an earliest charge transfer unit that transfers the electric charges earliest in an image signal generation period is configured to have higher capacitance in the capacitive coupling than the other charge transfer signal lines.