公开(公告)号：US20240305905A1

公开(公告)日：2024-09-12

申请号：US18666112

申请日：2024-05-16

Applicant: Sony Semiconductor Solutions Corporation

Inventor： Junichiro Kusuda

IPC: H04N25/62 ,  H04N25/75 ,  H04N25/77

CPC classification number: H04N25/62 ,  H04N25/75 ,  H04N25/77

Abstract: An overlight amount detection circuit (1) according to the present disclosure includes a MOS transistor and a high-impedance element (Ca). A source of the MOS transistor (Mn1) is connected to a vertical signal line (VSL) of an image sensor. The high-impedance element (Ca) is connected to a drain of the MOS transistor (Mn1). The overlight amount detection circuit (1) detects a potential fluctuation of the vertical signal line (VSL) based on a potential defined by a gate potential of the MOS transistor (Mn1), and outputs a potential of a contact point between the drain of the MOS transistor (Mn1) and the high-impedance element (Ca) as a signal indicating an overlight amount detection result.

公开(公告)号：US20240297202A1

公开(公告)日：2024-09-05

申请号：US18251630

申请日：2021-11-04

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： YILUN HE ,  TAKASHI MACHIDA

IPC: H01L27/148 ,  H01L27/146 ,  H04N25/62

CPC classification number: H01L27/14818 ,  H01L27/14689 ,  H04N25/62

Abstract: To prevent leakage of incident light to a charge holding unit of an imaging element. The pixel includes a photoelectric conversion unit disposed on a side of the light receiving face of the semiconductor substrate, a charge holding unit disposed on a side different from the light receiving face of the semiconductor substrate, and a charge transfer unit that transfers a charge to the charge holding unit, and is configured to have a rectangular shape in a light receiving face view. The charge holding unit light shielding film is configured to have a band shape adjacent to three sides including a first side that is one of the sides of the rectangle and parallel to the first side in a light receiving face view, is adjacent to a semiconductor region including the charge transfer unit in a light receiving face view, and is disposed in the pixel between the photoelectric conversion unit and the charge holding unit to shield incident light. The charge transfer unit light shielding film is configured to have a band shape adjacent to three sides including a second side that is a side facing the first side in a light receiving face view and parallel to the second side, and is configured to be disposed in the pixel between the photoelectric conversion unit and the charge transfer unit to shield incident light and have a shape which has an end portion overlapping an end portion of the charge holding unit light shielding film in a light receiving face view.

公开(公告)号：US20240251181A1

公开(公告)日：2024-07-25

申请号：US18602787

申请日：2024-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Korea University Research and Business Foundation

Inventor： Suyeon Lee ,  Q-Han Park ,  Unjeong Kim ,  Hyunjun Ma

IPC: H04N25/62 ,  H04N9/67

CPC classification number: H04N25/62 ,  H04N9/67

Abstract: Provided are a method and a device, for processing spectrum data of an image sensor. The method includes obtaining spectrum response signals corresponding to channels of spectrum data of light, the spectrum data being obtained from an object by an image sensor; determining a set of bases corresponding to the obtained spectrum response signals; performing, based on the determined set of bases, a change of basis on at least one basis included in the determined set of bases; and generating, by using a pseudo inverse, reconstructed spectrum data from the spectrum response signals on which the change of basis has been performed.

公开(公告)号：US20240171866A1

公开(公告)日：2024-05-23

申请号：US18298242

申请日：2023-04-10

Applicant: SK hynix Inc.

Inventor： Jun Hyeok CHOI ,  Dae Hyun LEE

IPC: H04N23/81 ,  H04N23/84 ,  H04N25/10 ,  H04N25/62

CPC classification number: H04N23/81 ,  H04N23/84 ,  H04N25/10 ,  H04N25/62

Abstract: An image processing device includes a memory for storing reference color ratios and crosstalk values of each of light source images acquired by sensing light sources having different wavelengths. The image processing device also includes a processor for receiving an image including a plurality of regions each including outer pixel values and inner pixel values of the same color, and correcting the outer pixel values or the inner pixel values by using difference values between the respective reference color ratios and a color ratio of the image as weights of the crosstalk values.

公开(公告)号：US20230387154A1

公开(公告)日：2023-11-30

申请号：US18224691

申请日：2023-07-21

Applicant: SONY GROUP CORPORATION

Inventor： Atsushi MASAGAKI ,  Yusuke TANAKA

IPC: H01L27/146 ,  G02B7/34 ,  H01L21/76

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  G02B7/34 ,  H01L21/76 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14641 ,  H01L27/1463 ,  H01L27/14612 ,  H01L27/1464 ,  H04N25/62

Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.

公开(公告)号：US11765474B2

公开(公告)日：2023-09-19

申请号：US17818938

申请日：2022-08-10

Applicant: ams Sensors USA Inc. ,  ams Sensors Belgium BVBA

Inventor： Denver Lloyd ,  Adi Xhakoni ,  Scott Johnson

IPC: H04N25/59 ,  H04N25/778 ,  H04N25/75 ,  H04N25/531 ,  H04N25/585 ,  H04N25/62 ,  H04N25/583 ,  H01L27/146

CPC classification number: H04N25/59 ,  H01L27/14612 ,  H01L27/14643 ,  H04N25/531 ,  H04N25/583 ,  H04N25/585 ,  H04N25/62 ,  H04N25/75 ,  H04N25/778

Abstract: In an embodiment a pixel arrangement includes at least one photodiode configured to convert electromagnetic radiation into a respective charge signal, a transfer gate between the photodiode and a capacitance for transferring the respective charge signal to the capacitance, a reset gate electrically coupled to the capacitance, the reset gate configured to reset the capacitance, an amplifier electrically connected to the capacitance and configured to generate, based on the respective charge signal and on a sensitivity mode, a respective amplified signal being a low sensitivity signal or a high sensitivity signal, respectively, wherein the low sensitivity signal and the high sensitivity signal are based on a common noise level, a first capacitor configured to store the high sensitivity signal, a second capacitor configured to store the low sensitivity signal, a first switch between an output terminal of the amplifier and the first capacitor and a second switch between the output terminal of the amplifier and the second capacitor.

公开(公告)号：US20240298893A1

公开(公告)日：2024-09-12

申请号：US18593789

申请日：2024-03-01

Applicant: CANON KABUSHIKI KAISHA

Inventor： HIROTO KANO

IPC: A61B3/00 ,  A61B3/103 ,  A61B3/15 ,  H04N25/62

CPC classification number: A61B3/0025 ,  A61B3/0008 ,  A61B3/103 ,  A61B3/15 ,  H04N25/62

Abstract: An examination apparatus detecting first reflected light from a first eye of a subject and second reflected light from a second eye of the subject includes an imaging device, and a processing unit. The imaging device includes pixels each including a first photoelectric conversion unit and a second photoelectric conversion unit. The processing unit includes a unit configured to acquire a first signal based on the first reflected light entering the first photoelectric conversion units and a second signal based on the second reflected light entering the second photoelectric conversion units, a unit configured to acquire crosstalk amounts of the first and second signals based on information about positions of the first and second eyes, and a unit configured to generate correction signals based on the first and second signals and amounts of the crosstalk.

公开(公告)号：US20240147094A1

公开(公告)日：2024-05-02

申请号：US18406383

申请日：2024-01-08

Applicant: CANON KABUSHIKI KAISHA

Inventor： ATSUSHI KANDORI ,  TOMOYA ONISHI

IPC: H04N25/71 ,  H04N25/445 ,  H04N25/62 ,  H04N25/77

CPC classification number: H04N25/745 ,  H04N25/445 ,  H04N25/62 ,  H04N25/77

Abstract: An imaging element having a plurality of pixels, wherein the plurality of pixels have stored charge reset periodically, at least in some of the plurality of pixels, first readout processing in which stored charge by first exposure is read out is performed, first signal processing based on a first pixel signal read out by the first readout processing is performed, whether to perform second readout processing in which stored charge by second exposure is read out and second signal processing based on a second pixel signal read out by the second readout processing is determined, in response to a result of the first signal processing, and the first readout processing, the first signal processing, and the second readout processing are performed within one cycle of reset which is performed periodically.

公开(公告)号：US11895418B2

公开(公告)日：2024-02-06

申请号：US17468295

申请日：2021-09-07

Applicant: SK hynix Inc.

Inventor： Yu Jin Park ,  Nam Ryeol Kim ,  Kang Bong Seo ,  Jeong Eun Song ,  Jung Soon Shin ,  Seung Hwan Lee

IPC: H04N25/75 ,  H04N25/62 ,  H04N25/709 ,  H04N25/771 ,  H04N25/772

CPC classification number: H04N25/75 ,  H04N25/62 ,  H04N25/709 ,  H04N25/771 ,  H04N25/772

Abstract: An image sensing device includes: a control circuit coupled between an output terminal of a pixel signal and a high voltage terminal, and configured to generate a control voltage corresponding to a voltage level of the pixel signal; and a current supplying circuit coupled between the output terminal and the high voltage terminal, and configured to supply a pre-charge current, which is configured to be adaptively adjusted according to the voltage level of the pixel signal, to the output terminal based on the control voltage.

公开(公告)号：US11799046B2

公开(公告)日：2023-10-24

申请号：US16875261

申请日：2020-05-15

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Yuhi Yorikado ,  Atsushi Toda ,  Susumu Inoue

IPC: H01L31/107 ,  G02B3/00 ,  H01L27/14 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/0232 ,  H04N25/62 ,  H04N25/76 ,  H04N25/70 ,  H04N25/13

CPC classification number: H01L31/107 ,  G02B3/00 ,  H01L27/14 ,  H01L27/146 ,  H01L27/14603 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/02327 ,  H01L31/022408 ,  H04N25/134 ,  H04N25/62 ,  H04N25/70 ,  H04N25/76 ,  G02B3/0056

Abstract: To improve detection efficiency in a solid-state imaging element including a SPAD in which an electrode and wiring are placed in a central portion. A solid-state imaging element includes a photodiode and a light collecting section. The photodiode includes a light receiving surface and an electrode placed on the light receiving surface, and that outputs an electrical signal in accordance with light incident on the light receiving surface in a state where a voltage exceeding a breakdown voltage is applied to the electrode. The light collecting section causes light from a subject to be collected in the light receiving surface other than a region where the electrode is placed.